Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers

Po Chun Liu; Cheng Lun Lu; Yew-Chuhg Wu; Ji Hao Cheng; Hao Ouyang

doi:10.1063/1.1823592

Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers

Po Chun Liu^*, Cheng Lun Lu, Yew-Chuhg Wu, Ji Hao Cheng, Hao Ouyang

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The electrical characteristics and microstructures of n -type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 °C. When temperatures increased above 400 °C, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 °C.

Original language	English
Pages (from-to)	4831-4833
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	21
DOIs	https://doi.org/10.1063/1.1823592
State	Published - 1 Nov 2004

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@article{9ca4f359b0b0411f81de4d51f068b8d8,

title = "Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers",

abstract = "The electrical characteristics and microstructures of n -type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 °C. When temperatures increased above 400 °C, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 °C.",

author = "Liu, {Po Chun} and Lu, {Cheng Lun} and Yew-Chuhg Wu and Cheng, {Ji Hao} and Hao Ouyang",

year = "2004",

month = nov,

day = "1",

doi = "10.1063/1.1823592",

language = "English",

volume = "85",

pages = "4831--4833",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers

AU - Liu, Po Chun

AU - Lu, Cheng Lun

AU - Wu, Yew-Chuhg

AU - Cheng, Ji Hao

AU - Ouyang, Hao

PY - 2004/11/1

Y1 - 2004/11/1

N2 - The electrical characteristics and microstructures of n -type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 °C. When temperatures increased above 400 °C, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 °C.

AB - The electrical characteristics and microstructures of n -type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400 °C. When temperatures increased above 400 °C, the oxide bonded area declined and finally disappeared. Electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850 °C.

UR - http://www.scopus.com/inward/record.url?scp=19144372431&partnerID=8YFLogxK

U2 - 10.1063/1.1823592

DO - 10.1063/1.1823592

M3 - Article

AN - SCOPUS:19144372431

SN - 0003-6951

VL - 85

SP - 4831

EP - 4833

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Effects of annealing temperature on electrical resistance of bonded n-GaAs wafers

Abstract

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