Effective structure of electron injection from ITO bottom cathode for inverted OLED

Ta Ya Chu; Szu Yi Chen; Jenn-Fang Chen; Chin H. Chen

Effective structure of electron injection from ITO bottom cathode for inverted OLED

Ta Ya Chu^*, Szu Yi Chen, Jenn-Fang Chen, Chin H. Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Conference article › peer-review

Abstract

For display drivers employ typically a-Si n-channel field effect transistors, they require an inverted OLED structure with a cathode as the bottom contact. ITO is regarded as the bottom cathode and can be applied to large size AM-OLED and transparent inverted OLEDs. We report the effective structure to improve the efficiency of electron injection from ITO cathode to Alq₃. We report the effective structure to improve the efficiency of electron injection from ITO cathode to Alq₃ and studied the current density-voltage characteristics of trilayer (Alq₃-LiF-Al), LiF and Mg inserted between ITO and Alq₃, respectively. We discovered that 1 nm Mg afforded the highest efficiency.

Original language	English
Pages (from-to)	972-974
Number of pages	3
Journal	Proceedings of International Meeting on Information Display
Volume	2
State	Published - 2006
Event	5th International Meeting on Information Display - Seoul, Korea, Republic of Duration: 19 Jul 2005 → 23 Jul 2005

Cite this

@article{4c92ef1df406415a9ff33d04a9b48d28,

title = "Effective structure of electron injection from ITO bottom cathode for inverted OLED",

abstract = "For display drivers employ typically a-Si n-channel field effect transistors, they require an inverted OLED structure with a cathode as the bottom contact. ITO is regarded as the bottom cathode and can be applied to large size AM-OLED and transparent inverted OLEDs. We report the effective structure to improve the efficiency of electron injection from ITO cathode to Alq3. We report the effective structure to improve the efficiency of electron injection from ITO cathode to Alq3 and studied the current density-voltage characteristics of trilayer (Alq3-LiF-Al), LiF and Mg inserted between ITO and Alq3, respectively. We discovered that 1 nm Mg afforded the highest efficiency.",

author = "Chu, {Ta Ya} and Chen, {Szu Yi} and Jenn-Fang Chen and Chen, {Chin H.}",

year = "2006",

language = "English",

volume = "2",

pages = "972--974",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "5th International Meeting on Information Display ; Conference date: 19-07-2005 Through 23-07-2005",

}

TY - JOUR

T1 - Effective structure of electron injection from ITO bottom cathode for inverted OLED

AU - Chu, Ta Ya

AU - Chen, Szu Yi

AU - Chen, Jenn-Fang

AU - Chen, Chin H.

PY - 2006

Y1 - 2006

N2 - For display drivers employ typically a-Si n-channel field effect transistors, they require an inverted OLED structure with a cathode as the bottom contact. ITO is regarded as the bottom cathode and can be applied to large size AM-OLED and transparent inverted OLEDs. We report the effective structure to improve the efficiency of electron injection from ITO cathode to Alq3. We report the effective structure to improve the efficiency of electron injection from ITO cathode to Alq3 and studied the current density-voltage characteristics of trilayer (Alq3-LiF-Al), LiF and Mg inserted between ITO and Alq3, respectively. We discovered that 1 nm Mg afforded the highest efficiency.

AB - For display drivers employ typically a-Si n-channel field effect transistors, they require an inverted OLED structure with a cathode as the bottom contact. ITO is regarded as the bottom cathode and can be applied to large size AM-OLED and transparent inverted OLEDs. We report the effective structure to improve the efficiency of electron injection from ITO cathode to Alq3. We report the effective structure to improve the efficiency of electron injection from ITO cathode to Alq3 and studied the current density-voltage characteristics of trilayer (Alq3-LiF-Al), LiF and Mg inserted between ITO and Alq3, respectively. We discovered that 1 nm Mg afforded the highest efficiency.

UR - http://www.scopus.com/inward/record.url?scp=33847415138&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33847415138

SN - 1738-7558

VL - 2

SP - 972

EP - 974

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - 5th International Meeting on Information Display

Y2 - 19 July 2005 through 23 July 2005

ER -

Effective structure of electron injection from ITO bottom cathode for inverted OLED

Abstract

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