Effective control of flat-band voltage in HfO2 gate dielectric with la2O3 incorporation

K. Okamoto*, M. Adachi, K. Kakushima, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

15 Scopus citations

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Engineering & Materials Science

Chemical Compounds