Effect of Zr/Ti ratios on characterization of Pb(ZrxTi1-x)O3 thin films on Al2O3 buffered Si for one-transistor memory applications

Chia Liang Sun; Jung Jui Hsu; San-Yuan Chen; Albert Chin

doi:10.1149/1.1542901

Effect of Zr/Ti ratios on characterization of Pb(Zr_xTi_1-x)O₃ thin films on Al₂O₃ buffered Si for one-transistor memory applications

Chia Liang Sun^*, Jung Jui Hsu, San-Yuan Chen, Albert Chin

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Pb(Zr_xTi_1-x)O₃ (PZT) thin films have been prepared on Al₂O₃/Si and PbTiO₃/Al₂O₃/Si substrates, respectively. On Al₂O₃/Si substrates, Ti-rich PZT thin films had lower perovskite transformation temperatures than those of Zr-rich PZT films. Therefore, PbTiO₃ was used as the seeding layer on Al₂O₃/Si to form a PbTiO₃/Al₂O₃/Si substrate. The threshold voltage shift of a PZT(53/47)/PbTiO₃/Al₂O₃/Si capacitor reaches 9 V with ± 10 V writing voltages, which is much larger than the 2 V of the PZT(0/100)/PbTiO₃/Al₂O₃/Si capacitor. Different memory mechanisms in the capacitance-voltage characteristics of capacitors were further examined and discussed in this paper.

Original language	English
Pages (from-to)	G187-G191
Journal	Journal of the Electrochemical Society
Volume	150
Issue number	3
DOIs	https://doi.org/10.1149/1.1542901
State	Published - Mar 2003

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@article{08c622a931394b908de2a227daaf741a,

title = "Effect of Zr/Ti ratios on characterization of Pb(ZrxTi1-x)O3 thin films on Al2O3 buffered Si for one-transistor memory applications",

abstract = "Pb(ZrxTi1-x)O3 (PZT) thin films have been prepared on Al2O3/Si and PbTiO3/Al2O3/Si substrates, respectively. On Al2O3/Si substrates, Ti-rich PZT thin films had lower perovskite transformation temperatures than those of Zr-rich PZT films. Therefore, PbTiO3 was used as the seeding layer on Al2O3/Si to form a PbTiO3/Al2O3/Si substrate. The threshold voltage shift of a PZT(53/47)/PbTiO3/Al2O3/Si capacitor reaches 9 V with ± 10 V writing voltages, which is much larger than the 2 V of the PZT(0/100)/PbTiO3/Al2O3/Si capacitor. Different memory mechanisms in the capacitance-voltage characteristics of capacitors were further examined and discussed in this paper.",

author = "Sun, {Chia Liang} and Hsu, {Jung Jui} and San-Yuan Chen and Albert Chin",

year = "2003",

month = mar,

doi = "10.1149/1.1542901",

language = "English",

volume = "150",

pages = "G187--G191",

journal = "Journal of the Electrochemical Society",

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T1 - Effect of Zr/Ti ratios on characterization of Pb(ZrxTi1-x)O3 thin films on Al2O3 buffered Si for one-transistor memory applications

AU - Sun, Chia Liang

AU - Hsu, Jung Jui

AU - Chen, San-Yuan

AU - Chin, Albert

PY - 2003/3

Y1 - 2003/3

N2 - Pb(ZrxTi1-x)O3 (PZT) thin films have been prepared on Al2O3/Si and PbTiO3/Al2O3/Si substrates, respectively. On Al2O3/Si substrates, Ti-rich PZT thin films had lower perovskite transformation temperatures than those of Zr-rich PZT films. Therefore, PbTiO3 was used as the seeding layer on Al2O3/Si to form a PbTiO3/Al2O3/Si substrate. The threshold voltage shift of a PZT(53/47)/PbTiO3/Al2O3/Si capacitor reaches 9 V with ± 10 V writing voltages, which is much larger than the 2 V of the PZT(0/100)/PbTiO3/Al2O3/Si capacitor. Different memory mechanisms in the capacitance-voltage characteristics of capacitors were further examined and discussed in this paper.

AB - Pb(ZrxTi1-x)O3 (PZT) thin films have been prepared on Al2O3/Si and PbTiO3/Al2O3/Si substrates, respectively. On Al2O3/Si substrates, Ti-rich PZT thin films had lower perovskite transformation temperatures than those of Zr-rich PZT films. Therefore, PbTiO3 was used as the seeding layer on Al2O3/Si to form a PbTiO3/Al2O3/Si substrate. The threshold voltage shift of a PZT(53/47)/PbTiO3/Al2O3/Si capacitor reaches 9 V with ± 10 V writing voltages, which is much larger than the 2 V of the PZT(0/100)/PbTiO3/Al2O3/Si capacitor. Different memory mechanisms in the capacitance-voltage characteristics of capacitors were further examined and discussed in this paper.

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U2 - 10.1149/1.1542901

DO - 10.1149/1.1542901

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SN - 0013-4651

VL - 150

SP - G187-G191

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 3

ER -

Effect of Zr/Ti ratios on characterization of Pb(Zr_xTi_1-x)O₃ thin films on Al₂O₃ buffered Si for one-transistor memory applications

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