Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes

Chin Yuan Hsu; Wen How Lan; Yew-Chuhg Wu

doi:10.1063/1.1601306

Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes

Chin Yuan Hsu^*, Wen How Lan, Yew-Chuhg Wu

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

The influences of thermal annealing on electrical properties of GaN LEDs were investigated. After annealing above 700°C, the electrical short circuit behavior was observed. The results implied direct evidences that the migration and indiffusion of Ni and Au along the TDs cause the short circuit characteristics of the p-n junction at high temperatures.

Original language	English
Pages (from-to)	2447-2449
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	12
DOIs	https://doi.org/10.1063/1.1601306
State	Published - 22 Sep 2003

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title = "Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes",

abstract = "The influences of thermal annealing on electrical properties of GaN LEDs were investigated. After annealing above 700°C, the electrical short circuit behavior was observed. The results implied direct evidences that the migration and indiffusion of Ni and Au along the TDs cause the short circuit characteristics of the p-n junction at high temperatures.",

author = "Hsu, {Chin Yuan} and Lan, {Wen How} and Yew-Chuhg Wu",

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AU - Hsu, Chin Yuan

AU - Lan, Wen How

AU - Wu, Yew-Chuhg

PY - 2003/9/22

Y1 - 2003/9/22

N2 - The influences of thermal annealing on electrical properties of GaN LEDs were investigated. After annealing above 700°C, the electrical short circuit behavior was observed. The results implied direct evidences that the migration and indiffusion of Ni and Au along the TDs cause the short circuit characteristics of the p-n junction at high temperatures.

AB - The influences of thermal annealing on electrical properties of GaN LEDs were investigated. After annealing above 700°C, the electrical short circuit behavior was observed. The results implied direct evidences that the migration and indiffusion of Ni and Au along the TDs cause the short circuit characteristics of the p-n junction at high temperatures.

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U2 - 10.1063/1.1601306

DO - 10.1063/1.1601306

M3 - Article

AN - SCOPUS:0142090035

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VL - 83

SP - 2447

EP - 2449

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes

Abstract

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