The influences of thermal annealing on electrical properties of GaN LEDs were investigated. After annealing above 700°C, the electrical short circuit behavior was observed. The results implied direct evidences that the migration and indiffusion of Ni and Au along the TDs cause the short circuit characteristics of the p-n junction at high temperatures.
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 22 Sep 2003|