Effect of the silver mirror location on the luminance intensity of double roughened GaN light-emitting diodes

Ping Wei Huang; Yew-Chuhg Wu

doi:10.1149/1.2983163

Effect of the silver mirror location on the luminance intensity of double roughened GaN light-emitting diodes

Ping Wei Huang^*, Yew-Chuhg Wu

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A new scheme structure of ITO/Ni/Ag/Ni mirror was presented to get high reflectance after annealing. At 470nm, the reflectance was as high as 90% after annealing at 270°C for 1 hour.

Original language	English
Title of host publication	ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9
Pages	97-101
Number of pages	5
Edition	7
DOIs	https://doi.org/10.1149/1.2983163
State	Published - 1 Dec 2008
Event	State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting - Honolulu, HI, United States Duration: 12 Oct 2008 → 17 Oct 2008

Publication series

Name	ECS Transactions
Number	7
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	12/10/08 → 17/10/08

Access to Document

10.1149/1.2983163

Cite this

Huang, P. W., & Wu, Y-C. (2008). Effect of the silver mirror location on the luminance intensity of double roughened GaN light-emitting diodes. In ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 (7 ed., pp. 97-101). (ECS Transactions; Vol. 16, No. 7). https://doi.org/10.1149/1.2983163

Huang, Ping Wei ; Wu, Yew-Chuhg. / Effect of the silver mirror location on the luminance intensity of double roughened GaN light-emitting diodes. ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9. 7. ed. 2008. pp. 97-101 (ECS Transactions; 7).

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title = "Effect of the silver mirror location on the luminance intensity of double roughened GaN light-emitting diodes",

abstract = "A new scheme structure of ITO/Ni/Ag/Ni mirror was presented to get high reflectance after annealing. At 470nm, the reflectance was as high as 90% after annealing at 270°C for 1 hour.",

author = "Huang, {Ping Wei} and Yew-Chuhg Wu",

year = "2008",

month = dec,

day = "1",

doi = "10.1149/1.2983163",

language = "English",

isbn = "9781566776530",

series = "ECS Transactions",

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booktitle = "ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9",

edition = "7",

note = "State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",

}

Huang, PW & Wu, Y-C 2008, Effect of the silver mirror location on the luminance intensity of double roughened GaN light-emitting diodes. in ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9. 7 edn, ECS Transactions, no. 7, vol. 16, pp. 97-101, State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting, Honolulu, HI, United States, 12/10/08. https://doi.org/10.1149/1.2983163

Effect of the silver mirror location on the luminance intensity of double roughened GaN light-emitting diodes. / Huang, Ping Wei; Wu, Yew-Chuhg.
ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9. 7. ed. 2008. p. 97-101 (ECS Transactions; Vol. 16, No. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Huang PW, Wu Y-C. Effect of the silver mirror location on the luminance intensity of double roughened GaN light-emitting diodes. In ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9. 7 ed. 2008. p. 97-101. (ECS Transactions; 7). doi: 10.1149/1.2983163

Effect of the silver mirror location on the luminance intensity of double roughened GaN light-emitting diodes

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