Effect of the forming gas annealing on the Zinc Gallium Oxide based Deep UV photodetector characteristics grown by metalorganic chemical vapor deposition

Siddharth Rana, Fu Gow Tarntair, Jitendra Pratap Singh, Ray Hua Horng*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Zinc Gallium oxide epilayer was grown on sapphire c-plane substrate by Metal organic chemical vapor deposition (MOCVD). Metal-semiconductor-metal (MSM) photodetectors were fabricated with Ni/Au Contacts. The effect of the Forming gas annealing (FGA) treatment on the Photodetector (PD) Characteristics was studied.

Original languageEnglish
Title of host publication2023 IEEE Photonics Conference, IPC 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350347227
DOIs
StatePublished - 2023
Event2023 IEEE Photonics Conference, IPC 2023 - Orlando, United States
Duration: 12 Nov 202316 Nov 2023

Publication series

Name2023 IEEE Photonics Conference, IPC 2023 - Proceedings

Conference

Conference2023 IEEE Photonics Conference, IPC 2023
Country/TerritoryUnited States
CityOrlando
Period12/11/2316/11/23

Keywords

  • Deep ultraviolet PD
  • forming gas annealing
  • MOCVD

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