Effect of temperature and illumination on the instability of a-Si:H thin-film transistors under AC gate bias stress

C. Y. Huang*, T. H. Teng, C. J. Yang, C. H. Tseng, Huang-Chung Cheng

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    7 Scopus citations

    Abstract

    This work investigates the temperature and illumination effects on the a-Si:H thin-film transistors (a-Sill TFTs) under AC gate bias stress to find the larger threshold voltage shift and subthreshold swing change for the bias-temperature-stress (BTS) and bias-illumination-stress (BIS). Excess carriers from thermal-generation electron-hole pairs or photoexcited electron-hole pairs may significantly influence the instability of a-Si:H TFTs during bias stress. The instability mechanisms originate from the carrier-induced defect creation enhanced by thermal generation in the BTS case and also emphasized by photoexcitation for the BIS case. Both stress conditions will induce a larger threshold voltage shift and higher cutoff frequency than those for simple bias stresses.

    Original languageEnglish
    Pages (from-to)L316-L318
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume40
    Issue number4 A
    DOIs
    StatePublished - 1 Apr 2001

    Keywords

    • A-Si:H TFTs
    • AC
    • Bias-illumination-stress
    • Bias-temperature-stress

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