Effect of substrate temperature on the microstructure of thin-film silicide

U. Köster; King-Ning Tu; P. S. Ho

doi:10.1063/1.89779

Effect of substrate temperature on the microstructure of thin-film silicide

U. Köster^*, King-Ning Tu, P. S. Ho

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

The effect of substrate temperature T_s during evaporation on the microstructure of Pd₂Si thin films on (111) Si formed by evaporation followed by subsequent higher-temperature anneal has been investigated by transmission electron microscopy. For T_s of 20 and 100°C, the Pd₂Si grows epitaxially on the substrate. For a T_s of 200°C the Pd₂Si is polycrystalline and grains are uniaxially textured about the [001] axis and there are pinholes in the film. For a T _s of 300°C, the microstructure of Pd₂Si is spongy and grains are much less oriented.

Original language	English
Pages (from-to)	634-636
Number of pages	3
Journal	Applied Physics Letters
Volume	31
Issue number	9
DOIs	https://doi.org/10.1063/1.89779
State	Published - 1 Dec 1977

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title = "Effect of substrate temperature on the microstructure of thin-film silicide",

abstract = "The effect of substrate temperature Ts during evaporation on the microstructure of Pd2Si thin films on (111) Si formed by evaporation followed by subsequent higher-temperature anneal has been investigated by transmission electron microscopy. For Ts of 20 and 100°C, the Pd2Si grows epitaxially on the substrate. For a Ts of 200°C the Pd2Si is polycrystalline and grains are uniaxially textured about the [001] axis and there are pinholes in the film. For a T s of 300°C, the microstructure of Pd2Si is spongy and grains are much less oriented.",

author = "U. K{\"o}ster and King-Ning Tu and Ho, {P. S.}",

year = "1977",

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T1 - Effect of substrate temperature on the microstructure of thin-film silicide

AU - Köster, U.

AU - Tu, King-Ning

AU - Ho, P. S.

PY - 1977/12/1

Y1 - 1977/12/1

N2 - The effect of substrate temperature Ts during evaporation on the microstructure of Pd2Si thin films on (111) Si formed by evaporation followed by subsequent higher-temperature anneal has been investigated by transmission electron microscopy. For Ts of 20 and 100°C, the Pd2Si grows epitaxially on the substrate. For a Ts of 200°C the Pd2Si is polycrystalline and grains are uniaxially textured about the [001] axis and there are pinholes in the film. For a T s of 300°C, the microstructure of Pd2Si is spongy and grains are much less oriented.

AB - The effect of substrate temperature Ts during evaporation on the microstructure of Pd2Si thin films on (111) Si formed by evaporation followed by subsequent higher-temperature anneal has been investigated by transmission electron microscopy. For Ts of 20 and 100°C, the Pd2Si grows epitaxially on the substrate. For a Ts of 200°C the Pd2Si is polycrystalline and grains are uniaxially textured about the [001] axis and there are pinholes in the film. For a T s of 300°C, the microstructure of Pd2Si is spongy and grains are much less oriented.

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U2 - 10.1063/1.89779

DO - 10.1063/1.89779

M3 - Article

AN - SCOPUS:19844362383

SN - 0003-6951

VL - 31

SP - 634

EP - 636

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Effect of substrate temperature on the microstructure of thin-film silicide

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