Effect of substrate temperature on the microstructure of thin-film silicide

U. Köster*, King-Ning Tu, P. S. Ho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


The effect of substrate temperature Ts during evaporation on the microstructure of Pd2Si thin films on (111) Si formed by evaporation followed by subsequent higher-temperature anneal has been investigated by transmission electron microscopy. For Ts of 20 and 100°C, the Pd2Si grows epitaxially on the substrate. For a Ts of 200°C the Pd2Si is polycrystalline and grains are uniaxially textured about the [001] axis and there are pinholes in the film. For a T s of 300°C, the microstructure of Pd2Si is spongy and grains are much less oriented.

Original languageEnglish
Pages (from-to)634-636
Number of pages3
JournalApplied Physics Letters
Issue number9
StatePublished - 1 Dec 1977


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