Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys

We have investigated the effect of substrate temperature on the reaction between Si and Pd-W and Pt-W alloys by I-V measurement of Schottky barrier height. We found that by maintaining a substrate temperature of 100°C during the deposition of W-rich Pd₂₀W₈₀ alloys, Schottky contacts of Pd₂Si on Si can be obtained without any subsequent annealing. Similarly, a substrate temperature of 300°C enables the formation of PtSi during the depostion of W-rich Pt₂₀W₈₀ alloys. For Pd-rich Pd₈₀W₂₀ and Pt-rich Pt₈₀W ₂₀ alloys, the substrate-temperature effect is not as significant as for the W-rich alloys.