Effect of stress interruption on TDDB lifetime during constant voltage stressing in metal-ferroelectric-insulator-semiconductor ferroelectric devices

Tiang Teck Tan; Tian Li Wu; Hsien Yang Liu; Cheng Yu Yu; Kalya Shubhakar; Nagarajan Raghavan; Kin Leong Pey

doi:10.1016/j.microrel.2024.115584

Effect of stress interruption on TDDB lifetime during constant voltage stressing in metal-ferroelectric-insulator-semiconductor ferroelectric devices

Tiang Teck Tan^*, Tian Li Wu^*, Hsien Yang Liu, Cheng Yu Yu, Kalya Shubhakar, Nagarajan Raghavan, Kin Leong Pey

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

TDDB lifetime is an important reliability metric for ferroelectric devices, which is dependent on the complex interplay between a multitude of factors. Mechanisms such as oxygen vacancy generation, charge trapping and detrapping are relevant in the degradation physics of hafnia-based ferroelectric devices. A large difference in Time-to-Failure in Metal – Ferroelectric – Insulator - Semiconductor (MFIS) devices in response to Interrupted and Uninterrupted Constant Voltage Stressing was found, which underscores the significance of stress interruption on the degradation physics occurring in the device. However, the effect of interruptions during stressing in MFIS devices is relatively unexplored. This work aims to pave the way for the development of stressing schemes for the evaluation of ferroelectric devices with closer adherence to practical operating conditions.

Original language	English
Article number	115584
Journal	Microelectronics Reliability
Volume	165
DOIs	https://doi.org/10.1016/j.microrel.2024.115584
State	Published - Feb 2025

Keywords

Charge trapping
Constant voltage stressing
Ferroelectric
Oxygen vacancy generation

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10.1016/j.microrel.2024.115584

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title = "Effect of stress interruption on TDDB lifetime during constant voltage stressing in metal-ferroelectric-insulator-semiconductor ferroelectric devices",

abstract = "TDDB lifetime is an important reliability metric for ferroelectric devices, which is dependent on the complex interplay between a multitude of factors. Mechanisms such as oxygen vacancy generation, charge trapping and detrapping are relevant in the degradation physics of hafnia-based ferroelectric devices. A large difference in Time-to-Failure in Metal – Ferroelectric – Insulator - Semiconductor (MFIS) devices in response to Interrupted and Uninterrupted Constant Voltage Stressing was found, which underscores the significance of stress interruption on the degradation physics occurring in the device. However, the effect of interruptions during stressing in MFIS devices is relatively unexplored. This work aims to pave the way for the development of stressing schemes for the evaluation of ferroelectric devices with closer adherence to practical operating conditions.",

keywords = "Charge trapping, Constant voltage stressing, Ferroelectric, Oxygen vacancy generation",

author = "Tan, {Tiang Teck} and Wu, {Tian Li} and Liu, {Hsien Yang} and Yu, {Cheng Yu} and Kalya Shubhakar and Nagarajan Raghavan and Pey, {Kin Leong}",

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year = "2025",

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doi = "10.1016/j.microrel.2024.115584",

language = "English",

volume = "165",

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T1 - Effect of stress interruption on TDDB lifetime during constant voltage stressing in metal-ferroelectric-insulator-semiconductor ferroelectric devices

AU - Tan, Tiang Teck

AU - Wu, Tian Li

AU - Liu, Hsien Yang

AU - Yu, Cheng Yu

AU - Shubhakar, Kalya

AU - Raghavan, Nagarajan

AU - Pey, Kin Leong

PY - 2025/2

Y1 - 2025/2

N2 - TDDB lifetime is an important reliability metric for ferroelectric devices, which is dependent on the complex interplay between a multitude of factors. Mechanisms such as oxygen vacancy generation, charge trapping and detrapping are relevant in the degradation physics of hafnia-based ferroelectric devices. A large difference in Time-to-Failure in Metal – Ferroelectric – Insulator - Semiconductor (MFIS) devices in response to Interrupted and Uninterrupted Constant Voltage Stressing was found, which underscores the significance of stress interruption on the degradation physics occurring in the device. However, the effect of interruptions during stressing in MFIS devices is relatively unexplored. This work aims to pave the way for the development of stressing schemes for the evaluation of ferroelectric devices with closer adherence to practical operating conditions.

AB - TDDB lifetime is an important reliability metric for ferroelectric devices, which is dependent on the complex interplay between a multitude of factors. Mechanisms such as oxygen vacancy generation, charge trapping and detrapping are relevant in the degradation physics of hafnia-based ferroelectric devices. A large difference in Time-to-Failure in Metal – Ferroelectric – Insulator - Semiconductor (MFIS) devices in response to Interrupted and Uninterrupted Constant Voltage Stressing was found, which underscores the significance of stress interruption on the degradation physics occurring in the device. However, the effect of interruptions during stressing in MFIS devices is relatively unexplored. This work aims to pave the way for the development of stressing schemes for the evaluation of ferroelectric devices with closer adherence to practical operating conditions.

KW - Charge trapping

KW - Constant voltage stressing

KW - Ferroelectric

KW - Oxygen vacancy generation

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U2 - 10.1016/j.microrel.2024.115584

DO - 10.1016/j.microrel.2024.115584

M3 - Article

AN - SCOPUS:85213529824

SN - 0026-2714

VL - 165

JO - Microelectronics Reliability

JF - Microelectronics Reliability

M1 - 115584

ER -

Effect of stress interruption on TDDB lifetime during constant voltage stressing in metal-ferroelectric-insulator-semiconductor ferroelectric devices

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Keywords

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