Effect of sputtered AlN location on the growth mechanism of GaN

Pei Yu Wu; Jhen Hong Li; Lung Hsing Hsu; Chia-Yen Huang; Yuh Jen Cheng; Hao-Chung Kuo; Yew-Chuhg Wu

doi:10.1149/2.0211709jss

Effect of sputtered AlN location on the growth mechanism of GaN

Pei Yu Wu, Jhen Hong Li, Lung Hsing Hsu, Chia-Yen Huang, Yuh Jen Cheng, Hao-Chung Kuo, Yew-Chuhg Wu

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Patterned sapphire substrates (PSSs) have been used to enhance the performance of GaN-based light-emitting diodes (LEDs). This performance can be further improved by using an ex situ sputtered AlN nucleation layer. This improvement has been attributed to the reduction of the GaN formation on the sidewall of the cone shape pattern. In this study, four kinds of PSS samples were fabricated to investigate the effect of sputtered AlN location on the growth mechanism of GaN in detail.

Original language	American English
Pages (from-to)	R131-R134
Number of pages	4
Journal	ECS Journal of Solid State Science and Technology
Volume	6
Issue number	9
DOIs	https://doi.org/10.1149/2.0211709jss
State	Published - 1 Jan 2017

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@article{5618e4daeb3e41d984b905e497fad49f,

title = "Effect of sputtered AlN location on the growth mechanism of GaN",

abstract = "Patterned sapphire substrates (PSSs) have been used to enhance the performance of GaN-based light-emitting diodes (LEDs). This performance can be further improved by using an ex situ sputtered AlN nucleation layer. This improvement has been attributed to the reduction of the GaN formation on the sidewall of the cone shape pattern. In this study, four kinds of PSS samples were fabricated to investigate the effect of sputtered AlN location on the growth mechanism of GaN in detail.",

author = "Wu, {Pei Yu} and Li, {Jhen Hong} and Hsu, {Lung Hsing} and Chia-Yen Huang and Cheng, {Yuh Jen} and Hao-Chung Kuo and Yew-Chuhg Wu",

year = "2017",

month = jan,

day = "1",

doi = "10.1149/2.0211709jss",

language = "American English",

volume = "6",

pages = "R131--R134",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "9",

}

TY - JOUR

T1 - Effect of sputtered AlN location on the growth mechanism of GaN

AU - Wu, Pei Yu

AU - Li, Jhen Hong

AU - Hsu, Lung Hsing

AU - Huang, Chia-Yen

AU - Cheng, Yuh Jen

AU - Kuo, Hao-Chung

AU - Wu, Yew-Chuhg

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Patterned sapphire substrates (PSSs) have been used to enhance the performance of GaN-based light-emitting diodes (LEDs). This performance can be further improved by using an ex situ sputtered AlN nucleation layer. This improvement has been attributed to the reduction of the GaN formation on the sidewall of the cone shape pattern. In this study, four kinds of PSS samples were fabricated to investigate the effect of sputtered AlN location on the growth mechanism of GaN in detail.

AB - Patterned sapphire substrates (PSSs) have been used to enhance the performance of GaN-based light-emitting diodes (LEDs). This performance can be further improved by using an ex situ sputtered AlN nucleation layer. This improvement has been attributed to the reduction of the GaN formation on the sidewall of the cone shape pattern. In this study, four kinds of PSS samples were fabricated to investigate the effect of sputtered AlN location on the growth mechanism of GaN in detail.

UR - http://www.scopus.com/inward/record.url?scp=85033796529&partnerID=8YFLogxK

U2 - 10.1149/2.0211709jss

DO - 10.1149/2.0211709jss

M3 - Article

AN - SCOPUS:85033796529

VL - 6

SP - R131-R134

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 9

ER -

Effect of sputtered AlN location on the growth mechanism of GaN

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