Effect of Shape and Size on Electron Transition Energies for Nanoscale InAs/GaAs Quantum Rings

Yi-Ming Li, Hsiao Mei Lu

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, we study the impact of the sizes and the shapes of nanoscale semiconductor quantum rings on the electron and hole energy states. A three-dimensional effective one band Schrödinger equation is solved numerically for semiconductor quantum rings with disk, cut-bottom-elliptical, and conical shapes. For small InAs/GaAs quantum rings we have found a sufficient difference in the ground state and excited state (l = −1) electron energies for rings with the same volume but different shapes. Volume dependence of the electron and hole energies can vary over a wide range and depends significantly on the ring shapes. It is found that a non-periodical oscillation of the energy band gap between the lowest electron and hole states as a function of external magnetic fields.

Original languageEnglish
Pages (from-to)487-490
Number of pages4
JournalJournal of Computational Electronics
Volume2
Issue number2-4
DOIs
StatePublished - 1 Dec 2003

Keywords

  • computer simulation
  • energy spectra
  • geometry and magnetic field effects
  • InAs/GaAs
  • nanoscale quantum ring

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