Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO2 dielectric
C. W. Yang*, Y. K. Fang, C. H. Chen, S. F. Chen, C. Y. Lin, C. S. Lin, M. F. Wang, Y. M. Lin, Tuo-Hung Hou, C. H. Chen, L. G. Yao, S. C. Chen, M. S. Liang
Research output: Contribution to journal › Article › peer-review
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