Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO2 dielectric

C. W. Yang; Y. K. Fang; C. H. Chen; S. F. Chen; C. Y. Lin; C. S. Lin; M. F. Wang; Y. M. Lin; Tuo-Hung Hou; C. H. Chen; L. G. Yao; S. C. Chen; M. S. Liang

doi:10.1063/1.1592634

Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO₂ dielectric

C. W. Yang^*, Y. K. Fang, C. H. Chen, S. F. Chen, C. Y. Lin, C. S. Lin, M. F. Wang, Y. M. Lin, Tuo-Hung Hou, C. H. Chen, L. G. Yao, S. C. Chen, M. S. Liang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Atomic layer deposition process was used to fabricate Hafnium dioxide gate dielectrics to investigate the flatband voltage shift relative to SiO₂. It was found that the direction of the voltage shift depends on the Fermi level position in the gate material. A model was proposed to explain the effects of poly-Si gate type on the flatband voltage shift in MOSFETs.

Original language	English
Pages (from-to)	308-310
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	2
DOIs	https://doi.org/10.1063/1.1592634
State	Published - 14 Jul 2003

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Yang, C. W., Fang, Y. K., Chen, C. H., Chen, S. F., Lin, C. Y., Lin, C. S., Wang, M. F., Lin, Y. M., Hou, T.-H., Chen, C. H., Yao, L. G., Chen, S. C., & Liang, M. S. (2003). Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO₂ dielectric. Applied Physics Letters, 83(2), 308-310. https://doi.org/10.1063/1.1592634

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title = "Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO2 dielectric",

abstract = "Atomic layer deposition process was used to fabricate Hafnium dioxide gate dielectrics to investigate the flatband voltage shift relative to SiO2. It was found that the direction of the voltage shift depends on the Fermi level position in the gate material. A model was proposed to explain the effects of poly-Si gate type on the flatband voltage shift in MOSFETs.",

author = "Yang, {C. W.} and Fang, {Y. K.} and Chen, {C. H.} and Chen, {S. F.} and Lin, {C. Y.} and Lin, {C. S.} and Wang, {M. F.} and Lin, {Y. M.} and Tuo-Hung Hou and Chen, {C. H.} and Yao, {L. G.} and Chen, {S. C.} and Liang, {M. S.}",

year = "2003",

month = jul,

day = "14",

doi = "10.1063/1.1592634",

language = "English",

volume = "83",

pages = "308--310",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

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Yang, CW, Fang, YK, Chen, CH, Chen, SF, Lin, CY, Lin, CS, Wang, MF, Lin, YM, Hou, T-H, Chen, CH, Yao, LG, Chen, SC & Liang, MS 2003, 'Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO₂ dielectric', Applied Physics Letters, vol. 83, no. 2, pp. 308-310. https://doi.org/10.1063/1.1592634

TY - JOUR

T1 - Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO2 dielectric

AU - Yang, C. W.

AU - Fang, Y. K.

AU - Chen, C. H.

AU - Chen, S. F.

AU - Lin, C. Y.

AU - Lin, C. S.

AU - Wang, M. F.

AU - Lin, Y. M.

AU - Hou, Tuo-Hung

AU - Chen, C. H.

AU - Yao, L. G.

AU - Chen, S. C.

AU - Liang, M. S.

PY - 2003/7/14

Y1 - 2003/7/14

N2 - Atomic layer deposition process was used to fabricate Hafnium dioxide gate dielectrics to investigate the flatband voltage shift relative to SiO2. It was found that the direction of the voltage shift depends on the Fermi level position in the gate material. A model was proposed to explain the effects of poly-Si gate type on the flatband voltage shift in MOSFETs.

AB - Atomic layer deposition process was used to fabricate Hafnium dioxide gate dielectrics to investigate the flatband voltage shift relative to SiO2. It was found that the direction of the voltage shift depends on the Fermi level position in the gate material. A model was proposed to explain the effects of poly-Si gate type on the flatband voltage shift in MOSFETs.

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U2 - 10.1063/1.1592634

DO - 10.1063/1.1592634

M3 - Article

AN - SCOPUS:0043270550

SN - 0003-6951

VL - 83

SP - 308

EP - 310

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO₂ dielectric

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