Effect of Nanotwin Boundary on the Cu-Cu Bonding

Tsan Feng Lu; Tung Yan Lai; Yi Yang Chu; Yew Chung Sermon Wu

doi:10.1149/2162-8777/ac0e14

Effect of Nanotwin Boundary on the Cu-Cu Bonding

Tsan Feng Lu, Tung Yan Lai, Yi Yang Chu, Yew Chung Sermon Wu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Cu direct bonding has been achieved at 120 C by using (111)-oriented nanotwinned Cu because it has the fastest surface diffusivity. In this study, the effect of nanotwin boundary on the Cu bonding was investigated by using two types of (111)-oriented Cu films: sputtered 97% (111)-oriented Cu films and electroplated nano-twinned-Cu films. Artificial voids were introduced at bonded interfaces by bonding an etched-Cu sample to an unetched-Cu. The evolutions of interfacial voids were investigated at 150 C and 200 C. It was found that nanotwin boundary could enhance the transport of Cu atoms, thus enhance Cu-Cu direct bonding.

Original language	English
Article number	074001
Number of pages	5
Journal	ECS Journal of Solid State Science and Technology
Volume	10
Issue number	7
DOIs	https://doi.org/10.1149/2162-8777/ac0e14
State	Published - 1 Jul 2021

Keywords

Cu direct bonding
nanotwinned Cu
Nanotwin Boundary

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10.1149/2162-8777/ac0e14

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@article{06ec22e4830149a5a48b4cc8be588a1f,

title = "Effect of Nanotwin Boundary on the Cu-Cu Bonding",

abstract = "Cu direct bonding has been achieved at 120 C by using (111)-oriented nanotwinned Cu because it has the fastest surface diffusivity. In this study, the effect of nanotwin boundary on the Cu bonding was investigated by using two types of (111)-oriented Cu films: sputtered 97% (111)-oriented Cu films and electroplated nano-twinned-Cu films. Artificial voids were introduced at bonded interfaces by bonding an etched-Cu sample to an unetched-Cu. The evolutions of interfacial voids were investigated at 150 C and 200 C. It was found that nanotwin boundary could enhance the transport of Cu atoms, thus enhance Cu-Cu direct bonding.",

keywords = "Cu direct bonding, nanotwinned Cu, Nanotwin Boundary",

author = "Lu, {Tsan Feng} and Lai, {Tung Yan} and Chu, {Yi Yang} and Wu, {Yew Chung Sermon}",

note = "Publisher Copyright: {\textcopyright} 2021 The Electrochemical Society ({"}ECS{"}). Published on behalf of ECS by IOP Publishing Limited.",

year = "2021",

month = jul,

day = "1",

doi = "10.1149/2162-8777/ac0e14",

language = "English",

volume = "10",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "7",

}

TY - JOUR

T1 - Effect of Nanotwin Boundary on the Cu-Cu Bonding

AU - Lu, Tsan Feng

AU - Lai, Tung Yan

AU - Chu, Yi Yang

AU - Wu, Yew Chung Sermon

PY - 2021/7/1

Y1 - 2021/7/1

N2 - Cu direct bonding has been achieved at 120 C by using (111)-oriented nanotwinned Cu because it has the fastest surface diffusivity. In this study, the effect of nanotwin boundary on the Cu bonding was investigated by using two types of (111)-oriented Cu films: sputtered 97% (111)-oriented Cu films and electroplated nano-twinned-Cu films. Artificial voids were introduced at bonded interfaces by bonding an etched-Cu sample to an unetched-Cu. The evolutions of interfacial voids were investigated at 150 C and 200 C. It was found that nanotwin boundary could enhance the transport of Cu atoms, thus enhance Cu-Cu direct bonding.

AB - Cu direct bonding has been achieved at 120 C by using (111)-oriented nanotwinned Cu because it has the fastest surface diffusivity. In this study, the effect of nanotwin boundary on the Cu bonding was investigated by using two types of (111)-oriented Cu films: sputtered 97% (111)-oriented Cu films and electroplated nano-twinned-Cu films. Artificial voids were introduced at bonded interfaces by bonding an etched-Cu sample to an unetched-Cu. The evolutions of interfacial voids were investigated at 150 C and 200 C. It was found that nanotwin boundary could enhance the transport of Cu atoms, thus enhance Cu-Cu direct bonding.

KW - Cu direct bonding

KW - nanotwinned Cu

KW - Nanotwin Boundary

UR - http://www.scopus.com/inward/record.url?scp=85109316343&partnerID=8YFLogxK

U2 - 10.1149/2162-8777/ac0e14

DO - 10.1149/2162-8777/ac0e14

M3 - Article

AN - SCOPUS:85109316343

VL - 10

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 7

M1 - 074001

ER -

Effect of Nanotwin Boundary on the Cu-Cu Bonding

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