Effect of modulating field on photoreflectance simulated by electroreflectance

S. J. Chiou*, Y. G. Sung, D. P. Wang, Kai-Feng Huang, T. C. Huang, A. K. Chu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Photoreflectance (PR) of surface-intrinsic-n+ (s-i-n+) type doped GaAs has been simulated by electroreflectance (ER). The simulated spectra of the s-i-n+ sample have exhibited many Franz-Keldysh oscillations, which enable the electric field (F) to be determined. It is known that F's determined from PR are subjected to photovoltaic effect and the measured F is close to Fbi - δF/2 when the modulating field, δF ≪ Fbi, where Fbi is the built-in field of the sample and δF is the modulating field. In this work, we have investigated the relation between the measured F and δF not only for the region where δF ≪ Fbi holds, but also for a whole range of δF. In order to determine the magnitude of δF, we have used ER to simulate PR, that is, the measurements of ER under a forward bias, which is set to be equal to δF/2.

Original languageEnglish
Pages (from-to)3770-3773
Number of pages4
JournalJournal of Applied Physics
Volume85
Issue number7
DOIs
StatePublished - 1 Apr 1999

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