Effect of mechanical strain on the performance' of an a-Si:H TFT with different length on metal foil substrate

M. C. Wang; T. C. Chang; Po-Tsun Liu; S. W. Tsao; J. R. Chen; Jian Shu Wir; Chin Jen Huang; Yu Hung Chen; Liang Tang Wang; Yih Rong Luo; I. Hsuan Peng; Te Chi Wong; Ya Lin Liu; Jung Fang Chang

Effect of mechanical strain on the performance' of an a-Si:H TFT with different length on metal foil substrate

M. C. Wang^*, T. C. Chang, Po-Tsun Liu, S. W. Tsao, J. R. Chen, Jian Shu Wir, Chin Jen Huang, Yu Hung Chen, Liang Tang Wang, Yih Rong Luo, I. Hsuan Peng, Te Chi Wong, Ya Lin Liu, Jung Fang Chang

^*Corresponding author for this work

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, the effect of mechanical strain on the performance of an hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with different channel length on metal foil substrate under uniaxial compressive or tensile strain was studied, where the strain is parallel to the TFT source-drain current path. The process of TFT with the maximum temperature 190°C exhibited a field-effect mobility of 0.1 cm²/Vs and a threshold voltage of 1.95 V and the leakage current of less than 10^-13 A. The TFTs were strained by inward (compression) or outward (tension) cylindrical bending. The mobility had a slightly change under the mechanical strain, which was due to the change in the disorder under bending strain.

Original language	English
Title of host publication	Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05
Editors	H.P. David Shieh, F.C. Chen
Pages	494-496
Number of pages	3
State	Published - Jun 2005
Event	International Display Manufacturing Conference and Exhibition, IDMC'05 - Taipei, Japan Duration: 21 Feb 2005 → 24 Feb 2005

Publication series

Name	International Display Manufacturing Conference and Exhibition, IDMC'05

Conference

Conference	International Display Manufacturing Conference and Exhibition, IDMC'05
Country/Territory	Japan
City	Taipei
Period	21/02/05 → 24/02/05

Keywords

A-Si TFT
Bending strain
Metal foil

Cite this

Wang, M. C., Chang, T. C., Liu, P.-T., Tsao, S. W., Chen, J. R., Wir, J. S., Huang, C. J., Chen, Y. H., Wang, L. T., Luo, Y. R., Peng, I. H., Wong, T. C., Liu, Y. L., & Chang, J. F. (2005). Effect of mechanical strain on the performance' of an a-Si:H TFT with different length on metal foil substrate. In H. P. David Shieh, & F. C. Chen (Eds.), Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05 (pp. 494-496). (International Display Manufacturing Conference and Exhibition, IDMC'05).

Wang, M. C. ; Chang, T. C. ; Liu, Po-Tsun et al. / Effect of mechanical strain on the performance' of an a-Si:H TFT with different length on metal foil substrate. Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05. editor / H.P. David Shieh ; F.C. Chen. 2005. pp. 494-496 (International Display Manufacturing Conference and Exhibition, IDMC'05).

@inproceedings{2e6fbabd41ac4d8e920799e4d558711a,

title = "Effect of mechanical strain on the performance' of an a-Si:H TFT with different length on metal foil substrate",

abstract = "In this paper, the effect of mechanical strain on the performance of an hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with different channel length on metal foil substrate under uniaxial compressive or tensile strain was studied, where the strain is parallel to the TFT source-drain current path. The process of TFT with the maximum temperature 190°C exhibited a field-effect mobility of 0.1 cm2/Vs and a threshold voltage of 1.95 V and the leakage current of less than 10-13 A. The TFTs were strained by inward (compression) or outward (tension) cylindrical bending. The mobility had a slightly change under the mechanical strain, which was due to the change in the disorder under bending strain.",

keywords = "A-Si TFT, Bending strain, Metal foil",

author = "Wang, {M. C.} and Chang, {T. C.} and Po-Tsun Liu and Tsao, {S. W.} and Chen, {J. R.} and Wir, {Jian Shu} and Huang, {Chin Jen} and Chen, {Yu Hung} and Wang, {Liang Tang} and Luo, {Yih Rong} and Peng, {I. Hsuan} and Wong, {Te Chi} and Liu, {Ya Lin} and Chang, {Jung Fang}",

year = "2005",

month = jun,

language = "English",

isbn = "9572852221",

series = "International Display Manufacturing Conference and Exhibition, IDMC'05",

pages = "494--496",

editor = "{David Shieh}, H.P. and F.C. Chen",

booktitle = "Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05",

note = "International Display Manufacturing Conference and Exhibition, IDMC'05 ; Conference date: 21-02-2005 Through 24-02-2005",

}

Wang, MC, Chang, TC, Liu, P-T, Tsao, SW, Chen, JR, Wir, JS, Huang, CJ, Chen, YH, Wang, LT, Luo, YR, Peng, IH, Wong, TC, Liu, YL & Chang, JF 2005, Effect of mechanical strain on the performance' of an a-Si:H TFT with different length on metal foil substrate. in HP David Shieh & FC Chen (eds), Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05. International Display Manufacturing Conference and Exhibition, IDMC'05, pp. 494-496, International Display Manufacturing Conference and Exhibition, IDMC'05, Taipei, Japan, 21/02/05.

Effect of mechanical strain on the performance' of an a-Si:H TFT with different length on metal foil substrate. / Wang, M. C.; Chang, T. C.; Liu, Po-Tsun et al.
Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05. ed. / H.P. David Shieh; F.C. Chen. 2005. p. 494-496 (International Display Manufacturing Conference and Exhibition, IDMC'05).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of mechanical strain on the performance' of an a-Si:H TFT with different length on metal foil substrate

AU - Wang, M. C.

AU - Chang, T. C.

AU - Liu, Po-Tsun

AU - Tsao, S. W.

AU - Chen, J. R.

AU - Wir, Jian Shu

AU - Huang, Chin Jen

AU - Chen, Yu Hung

AU - Wang, Liang Tang

AU - Luo, Yih Rong

AU - Peng, I. Hsuan

AU - Wong, Te Chi

AU - Liu, Ya Lin

AU - Chang, Jung Fang

PY - 2005/6

Y1 - 2005/6

N2 - In this paper, the effect of mechanical strain on the performance of an hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with different channel length on metal foil substrate under uniaxial compressive or tensile strain was studied, where the strain is parallel to the TFT source-drain current path. The process of TFT with the maximum temperature 190°C exhibited a field-effect mobility of 0.1 cm2/Vs and a threshold voltage of 1.95 V and the leakage current of less than 10-13 A. The TFTs were strained by inward (compression) or outward (tension) cylindrical bending. The mobility had a slightly change under the mechanical strain, which was due to the change in the disorder under bending strain.

AB - In this paper, the effect of mechanical strain on the performance of an hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with different channel length on metal foil substrate under uniaxial compressive or tensile strain was studied, where the strain is parallel to the TFT source-drain current path. The process of TFT with the maximum temperature 190°C exhibited a field-effect mobility of 0.1 cm2/Vs and a threshold voltage of 1.95 V and the leakage current of less than 10-13 A. The TFTs were strained by inward (compression) or outward (tension) cylindrical bending. The mobility had a slightly change under the mechanical strain, which was due to the change in the disorder under bending strain.

KW - A-Si TFT

KW - Bending strain

KW - Metal foil

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T3 - International Display Manufacturing Conference and Exhibition, IDMC'05

SP - 494

EP - 496

BT - Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05

A2 - David Shieh, H.P.

A2 - Chen, F.C.

T2 - International Display Manufacturing Conference and Exhibition, IDMC'05

Y2 - 21 February 2005 through 24 February 2005

ER -

Wang MC, Chang TC, Liu PT, Tsao SW, Chen JR, Wir JS et al. Effect of mechanical strain on the performance' of an a-Si:H TFT with different length on metal foil substrate. In David Shieh HP, Chen FC, editors, Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05. 2005. p. 494-496. (International Display Manufacturing Conference and Exhibition, IDMC'05).

Effect of mechanical strain on the performance' of an a-Si:H TFT with different length on metal foil substrate

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Publication series

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Keywords

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