Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

You Chen Weng; Ming Yao Hsiao; Chun Hsiung Lin; Yu-Pin Lan; Edward Yi Chang

doi:10.3390/ma16093376

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

You Chen Weng, Ming Yao Hsiao, Chun Hsiung Lin, Yu-Pin Lan, Edward Yi Chang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The XRD and TEM showed that when the V/III ratio was optimized during the HP-GaN NL growth, the edge dislocation density in the HP-GaN NL layer could be reduced significantly. Experimental results exhibited a lower off-state leakage current, higher maximum I_D and G_m (corresponding to 22.5% and 21.7% improvement, respectively), and lower on-state resistance. These results demonstrate that the electrical properties of the AlGaN/GaN HEMT can be improved through the insertion of a HP-GaN NL.

Original language	English
Article number	3376
Journal	Materials
Volume	16
Issue number	9
DOIs	https://doi.org/10.3390/ma16093376
State	Published - May 2023

Keywords

AlGaN/GaN HEMT
high pressure
nucleation layer

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10.3390/ma16093376

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title = "Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate",

abstract = "A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The XRD and TEM showed that when the V/III ratio was optimized during the HP-GaN NL growth, the edge dislocation density in the HP-GaN NL layer could be reduced significantly. Experimental results exhibited a lower off-state leakage current, higher maximum ID and Gm (corresponding to 22.5% and 21.7% improvement, respectively), and lower on-state resistance. These results demonstrate that the electrical properties of the AlGaN/GaN HEMT can be improved through the insertion of a HP-GaN NL.",

keywords = "AlGaN/GaN HEMT, high pressure, nucleation layer",

author = "Weng, {You Chen} and Hsiao, {Ming Yao} and Lin, {Chun Hsiung} and Yu-Pin Lan and Chang, {Edward Yi}",

note = "Publisher Copyright: {\textcopyright} 2023 by the authors.",

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month = may,

doi = "10.3390/ma16093376",

language = "English",

volume = "16",

journal = "Materials",

issn = "1996-1944",

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number = "9",

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TY - JOUR

T1 - Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

AU - Weng, You Chen

AU - Hsiao, Ming Yao

AU - Lin, Chun Hsiung

AU - Lan, Yu-Pin

AU - Chang, Edward Yi

PY - 2023/5

Y1 - 2023/5

N2 - A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The XRD and TEM showed that when the V/III ratio was optimized during the HP-GaN NL growth, the edge dislocation density in the HP-GaN NL layer could be reduced significantly. Experimental results exhibited a lower off-state leakage current, higher maximum ID and Gm (corresponding to 22.5% and 21.7% improvement, respectively), and lower on-state resistance. These results demonstrate that the electrical properties of the AlGaN/GaN HEMT can be improved through the insertion of a HP-GaN NL.

AB - A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The XRD and TEM showed that when the V/III ratio was optimized during the HP-GaN NL growth, the edge dislocation density in the HP-GaN NL layer could be reduced significantly. Experimental results exhibited a lower off-state leakage current, higher maximum ID and Gm (corresponding to 22.5% and 21.7% improvement, respectively), and lower on-state resistance. These results demonstrate that the electrical properties of the AlGaN/GaN HEMT can be improved through the insertion of a HP-GaN NL.

KW - AlGaN/GaN HEMT

KW - high pressure

KW - nucleation layer

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U2 - 10.3390/ma16093376

DO - 10.3390/ma16093376

M3 - Article

AN - SCOPUS:85159258125

SN - 1996-1944

VL - 16

JO - Materials

JF - Materials

IS - 9

M1 - 3376

ER -

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

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