Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes

Jenn-Fang Chen; P. Y. Wang; J. S. Wang; H. Z. Wong

doi:10.1063/1.373500

Effect of growth temperature on the electric properties of In_0.12Ga_0.88As/GaAs p-i-n multiple-quantum-well diodes

Jenn-Fang Chen^*, P. Y. Wang, J. S. Wang, H. Z. Wong

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

Abstract

The electric properties of In_0.12Ga_0.88As/GaAs p-i-n multiple-quantum-well (MQW) diodes, with the MQW layer grown at different temperatures by molecular beam epitaxy, have been investigated. Temperature-dependent current-voltage studies reveal a trap-filled limit current at a low temperature and a generation-recombination current via deep levels at high temperature for a 300°C-grown sample. Frequency-dependent capacitance and deep-level transient spectroscopy reveal one majority trap at 0.73 eV and two minority traps at 0.71 and 0.43 eV. The 0.73 eV trap is also detected in 550°C-grown samples, suggesting that it is a common defect in relaxed InGaAs/ GaAs MQWs and probably originates from the defect states related to the strain relaxation. The 0.71 eV trap is believed to be the dominating deep level that governs the current conduction due to the activation energy observed in the current-voltage characteristics.

Original language	English
Pages (from-to)	8074-8079
Number of pages	6
Journal	Journal of Applied Physics
Volume	87
Issue number	11
DOIs	https://doi.org/10.1063/1.373500
State	Published - Jun 2000

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title = "Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes",

abstract = "The electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well (MQW) diodes, with the MQW layer grown at different temperatures by molecular beam epitaxy, have been investigated. Temperature-dependent current-voltage studies reveal a trap-filled limit current at a low temperature and a generation-recombination current via deep levels at high temperature for a 300°C-grown sample. Frequency-dependent capacitance and deep-level transient spectroscopy reveal one majority trap at 0.73 eV and two minority traps at 0.71 and 0.43 eV. The 0.73 eV trap is also detected in 550°C-grown samples, suggesting that it is a common defect in relaxed InGaAs/ GaAs MQWs and probably originates from the defect states related to the strain relaxation. The 0.71 eV trap is believed to be the dominating deep level that governs the current conduction due to the activation energy observed in the current-voltage characteristics.",

author = "Jenn-Fang Chen and Wang, {P. Y.} and Wang, {J. S.} and Wong, {H. Z.}",

year = "2000",

month = jun,

doi = "10.1063/1.373500",

language = "English",

volume = "87",

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issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes

AU - Chen, Jenn-Fang

AU - Wang, P. Y.

AU - Wang, J. S.

AU - Wong, H. Z.

PY - 2000/6

Y1 - 2000/6

N2 - The electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well (MQW) diodes, with the MQW layer grown at different temperatures by molecular beam epitaxy, have been investigated. Temperature-dependent current-voltage studies reveal a trap-filled limit current at a low temperature and a generation-recombination current via deep levels at high temperature for a 300°C-grown sample. Frequency-dependent capacitance and deep-level transient spectroscopy reveal one majority trap at 0.73 eV and two minority traps at 0.71 and 0.43 eV. The 0.73 eV trap is also detected in 550°C-grown samples, suggesting that it is a common defect in relaxed InGaAs/ GaAs MQWs and probably originates from the defect states related to the strain relaxation. The 0.71 eV trap is believed to be the dominating deep level that governs the current conduction due to the activation energy observed in the current-voltage characteristics.

AB - The electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well (MQW) diodes, with the MQW layer grown at different temperatures by molecular beam epitaxy, have been investigated. Temperature-dependent current-voltage studies reveal a trap-filled limit current at a low temperature and a generation-recombination current via deep levels at high temperature for a 300°C-grown sample. Frequency-dependent capacitance and deep-level transient spectroscopy reveal one majority trap at 0.73 eV and two minority traps at 0.71 and 0.43 eV. The 0.73 eV trap is also detected in 550°C-grown samples, suggesting that it is a common defect in relaxed InGaAs/ GaAs MQWs and probably originates from the defect states related to the strain relaxation. The 0.71 eV trap is believed to be the dominating deep level that governs the current conduction due to the activation energy observed in the current-voltage characteristics.

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SN - 0021-8979

VL - 87

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Effect of growth temperature on the electric properties of In_0.12Ga_0.88As/GaAs p-i-n multiple-quantum-well diodes

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