Effect of Ge incorporation on the performance of p-channel polycrystalline Sil - xGex thin-film transistors

Horng-Chih Lin*, H. Y. Lin, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this study, p-channel polycrystalline silicon-germanium thin-film transistors (poly-Sil - xGex TFTs) with different Ge contents in the channel layer were fabricated and characterized. A novel device process was developed to fabricate the test samples. The device structure utilized the in situ boron-doped poly-Si0.79Ge0.21 with an extremely low resistivity (below 2 mΩ cm) as the source/drain and the undoped poly-Si (or Sil - xGex) as the channel layer. It is observed that the addition of Ge atoms in the channel would significantly increase the amount of trap density at grain boundaries thus degrading the device performance. Based on these results, we recommend the use of poly-Sil - xGex source/drain to reduce the contact resistance but do not recommend that it is appropriate to replace poly-Si as the channel material of TFTs.

Original languageEnglish
Pages (from-to)645-651
Number of pages7
JournalSolid-State Electronics
Volume39
Issue number5
DOIs
StatePublished - 1 Jan 1996

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