TY - JOUR
T1 - Effect of Gamma Irradiation on the Structure, Morphology, and Memristive Properties of CVD Grown ReS2 Thin Film
AU - Aggarwal, Pallavi
AU - Bisht, Prashant
AU - Jana, Subhajit
AU - Mishra, Ambuj
AU - Ray, Samit Kumar
AU - Chang, Edward Yi
AU - Mehta, Bodh Raj
AU - Singh, Rajendra
N1 - Publisher Copyright:
© 2024 Wiley-VCH GmbH.
PY - 2024/9/18
Y1 - 2024/9/18
N2 - In this work, effect of gamma irradiation on chemical vapor deposition grown ReS2 thin films vis-a-vis change in its structure, morphology, chemical composition, and memristive behaviour is reported to assess its radiation hardness for space applications. High-resolution transmission electron micrographs and selected area electron diffraction pattern infer polycrystalline to amorphous phase transition and increase in the number of grain boundaries (GBs) after exposure to 25 kGy of gamma radiation. X-ray photoelectron spectroscopy and low-temperature photoluminescence measurements reveal the formation of sulfur vacancies (SV) accompanied with partial oxidation of film. Memristors are then fabricated on the as-grown film using different metal electrodes, which are Ag, Pt, and Ti in lateral geometry, and their resistive switching (RS) mechanism is studied along with the impact of gamma irradiation. RS is attributed to the formation of conducting filaments due to GB-mediated migration of metal ions, SV, and oxygen ions from the partially oxidized film. Furthermore, irradiation is found to increase current in the high resistance state of the device, which subsequently reduces the memory window. This impact is observed to be consistent across all the devices which validates the effect of irradiation irrespective of the nature of the metal electrode used.
AB - In this work, effect of gamma irradiation on chemical vapor deposition grown ReS2 thin films vis-a-vis change in its structure, morphology, chemical composition, and memristive behaviour is reported to assess its radiation hardness for space applications. High-resolution transmission electron micrographs and selected area electron diffraction pattern infer polycrystalline to amorphous phase transition and increase in the number of grain boundaries (GBs) after exposure to 25 kGy of gamma radiation. X-ray photoelectron spectroscopy and low-temperature photoluminescence measurements reveal the formation of sulfur vacancies (SV) accompanied with partial oxidation of film. Memristors are then fabricated on the as-grown film using different metal electrodes, which are Ag, Pt, and Ti in lateral geometry, and their resistive switching (RS) mechanism is studied along with the impact of gamma irradiation. RS is attributed to the formation of conducting filaments due to GB-mediated migration of metal ions, SV, and oxygen ions from the partially oxidized film. Furthermore, irradiation is found to increase current in the high resistance state of the device, which subsequently reduces the memory window. This impact is observed to be consistent across all the devices which validates the effect of irradiation irrespective of the nature of the metal electrode used.
KW - conduction filament (CF)
KW - gamma radiation
KW - grain boundary (GB)
KW - resistive switching (RS)
KW - sulfur vacancy (S)
KW - valence change mechanism (VCM)
UR - http://www.scopus.com/inward/record.url?scp=85195679246&partnerID=8YFLogxK
U2 - 10.1002/admt.202400400
DO - 10.1002/admt.202400400
M3 - Article
AN - SCOPUS:85195679246
SN - 2365-709X
VL - 9
JO - Advanced Materials Technologies
JF - Advanced Materials Technologies
IS - 18
M1 - 2400400
ER -