Effect of formation temperature on quality of gate dielectric on germanium substrate

Erh Jye Wei, Bing-Yue Tsui, Pin Jiun Wu

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Germanium metal-insulator-semiconductor (MIS) structure with HfO2/Al2O3/GeO2 gate stack have been demonstrated to exhibit good performance. In this work, the effect of formation temperature of the gate stack on the quality of the gate dielectric is investigated. It is found that the higher plasma oxidation temperature helps the GeO2 formation and less interface states. But the higher deposition temperature of the ALD high-k films may degrade the interface and result in higher leakage current.

    Original languageEnglish
    Title of host publicationProceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages252-255
    Number of pages4
    ISBN (Electronic)9781467382588
    DOIs
    StatePublished - 9 Sep 2016
    Event23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016 - Singapore, Singapore
    Duration: 18 Jul 201621 Jul 2016

    Publication series

    NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
    Volume2016-September

    Conference

    Conference23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016
    Country/TerritorySingapore
    CitySingapore
    Period18/07/1621/07/16

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