Effect of fin angle on electrical characteristics of nanoscale bulk FinFETs

Yi-Ming Li; Wei Hsin Chen

Effect of fin angle on electrical characteristics of nanoscale bulk FinFETs

Yi-Ming Li^*, Wei Hsin Chen

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

Bulk fin-shaped field effect transistor (finFET) has been viewed as a promising candidate for sub-45 nm very large-scale integrated (VLSI) circuit design and manufacturing. The structure features excellent device characteristics in comparing with the conventionally planar devices. In fabricating the bulk finFETs, the effect of a nonrectangular fin angle has to be carefully concerned that an ideal fin angle (90 degree) is not easy to be manufactured. Therefore, the short channel effect may be arisen due to the non-ideal manufacturing conditions and influence the device electrical properties. In this paper, the performance impacted by angles and heights of bulk finFETs are for the first time comprehensively investigated to draw the optimal strategy in novel VLSI circuit design.

Original language	English
Pages	20-23
Number of pages	4
State	Published - May 2006
Event	2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA, United States Duration: 7 May 2006 → 11 May 2006

Conference

Conference	2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Country/Territory	United States
City	Boston, MA
Period	7/05/06 → 11/05/06

Keywords

3D simulation
Bulk finFET
Electrical characteristics
Geometry effect
Nanoscale VLSI devices
Optimal angle

Cite this

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title = "Effect of fin angle on electrical characteristics of nanoscale bulk FinFETs",

abstract = "Bulk fin-shaped field effect transistor (finFET) has been viewed as a promising candidate for sub-45 nm very large-scale integrated (VLSI) circuit design and manufacturing. The structure features excellent device characteristics in comparing with the conventionally planar devices. In fabricating the bulk finFETs, the effect of a nonrectangular fin angle has to be carefully concerned that an ideal fin angle (90 degree) is not easy to be manufactured. Therefore, the short channel effect may be arisen due to the non-ideal manufacturing conditions and influence the device electrical properties. In this paper, the performance impacted by angles and heights of bulk finFETs are for the first time comprehensively investigated to draw the optimal strategy in novel VLSI circuit design.",

keywords = "3D simulation, Bulk finFET, Electrical characteristics, Geometry effect, Nanoscale VLSI devices, Optimal angle",

author = "Yi-Ming Li and Chen, {Wei Hsin}",

year = "2006",

month = may,

language = "English",

pages = "20--23",

note = "2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings ; Conference date: 07-05-2006 Through 11-05-2006",

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T1 - Effect of fin angle on electrical characteristics of nanoscale bulk FinFETs

AU - Li, Yi-Ming

AU - Chen, Wei Hsin

PY - 2006/5

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N2 - Bulk fin-shaped field effect transistor (finFET) has been viewed as a promising candidate for sub-45 nm very large-scale integrated (VLSI) circuit design and manufacturing. The structure features excellent device characteristics in comparing with the conventionally planar devices. In fabricating the bulk finFETs, the effect of a nonrectangular fin angle has to be carefully concerned that an ideal fin angle (90 degree) is not easy to be manufactured. Therefore, the short channel effect may be arisen due to the non-ideal manufacturing conditions and influence the device electrical properties. In this paper, the performance impacted by angles and heights of bulk finFETs are for the first time comprehensively investigated to draw the optimal strategy in novel VLSI circuit design.

AB - Bulk fin-shaped field effect transistor (finFET) has been viewed as a promising candidate for sub-45 nm very large-scale integrated (VLSI) circuit design and manufacturing. The structure features excellent device characteristics in comparing with the conventionally planar devices. In fabricating the bulk finFETs, the effect of a nonrectangular fin angle has to be carefully concerned that an ideal fin angle (90 degree) is not easy to be manufactured. Therefore, the short channel effect may be arisen due to the non-ideal manufacturing conditions and influence the device electrical properties. In this paper, the performance impacted by angles and heights of bulk finFETs are for the first time comprehensively investigated to draw the optimal strategy in novel VLSI circuit design.

KW - 3D simulation

KW - Bulk finFET

KW - Electrical characteristics

KW - Geometry effect

KW - Nanoscale VLSI devices

KW - Optimal angle

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M3 - Paper

AN - SCOPUS:33845190149

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T2 - 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings

Y2 - 7 May 2006 through 11 May 2006

ER -

Effect of fin angle on electrical characteristics of nanoscale bulk FinFETs

Abstract

Conference

Keywords

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