Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers

Chun Yuan Huang; Meng Chyi Wu; Hsin-Chieh Yu; Wen Jang Jiang; Jin Mei Wang; Chia Pin Sung

doi:10.1116/1.1775004

Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers

Chun Yuan Huang^*, Meng Chyi Wu, Hsin-Chieh Yu, Wen Jang Jiang, Jin Mei Wang, Chia Pin Sung

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

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1 Scopus citations

Abstract

The influence of electrostatic discharge (ESD) stress voltage on the device performance of 850 nm vertical-cavity surface-emitting lasers (VCSEL) was investigated. It was observed that the ESD effect induces dark-region defects, which acts as nonradiative recombination centers in the active layer and increase the leakage current and degrade the light output power. It was shown that the VCSEL exhibits multiple transverse mode without ESD stress voltage. It was demonstrated that the device exhibits a weak but single fundamental mode with smaller beam divergence by increasing the stress voltage up t0 2.6 kV.

Original language	English
Pages (from-to)	1970-1973
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	4
DOIs	https://doi.org/10.1116/1.1775004
State	Published - 1 Jul 2004

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title = "Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers",

abstract = "The influence of electrostatic discharge (ESD) stress voltage on the device performance of 850 nm vertical-cavity surface-emitting lasers (VCSEL) was investigated. It was observed that the ESD effect induces dark-region defects, which acts as nonradiative recombination centers in the active layer and increase the leakage current and degrade the light output power. It was shown that the VCSEL exhibits multiple transverse mode without ESD stress voltage. It was demonstrated that the device exhibits a weak but single fundamental mode with smaller beam divergence by increasing the stress voltage up t0 2.6 kV.",

author = "Huang, {Chun Yuan} and Wu, {Meng Chyi} and Hsin-Chieh Yu and Jiang, {Wen Jang} and Wang, {Jin Mei} and Sung, {Chia Pin}",

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doi = "10.1116/1.1775004",

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Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers. / Huang, Chun Yuan; Wu, Meng Chyi; Yu, Hsin-Chieh et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 4, 01.07.2004, p. 1970-1973.

Research output: Contribution to journal › Article › peer-review

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T1 - Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers

AU - Huang, Chun Yuan

AU - Wu, Meng Chyi

AU - Yu, Hsin-Chieh

AU - Jiang, Wen Jang

AU - Wang, Jin Mei

AU - Sung, Chia Pin

PY - 2004/7/1

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N2 - The influence of electrostatic discharge (ESD) stress voltage on the device performance of 850 nm vertical-cavity surface-emitting lasers (VCSEL) was investigated. It was observed that the ESD effect induces dark-region defects, which acts as nonradiative recombination centers in the active layer and increase the leakage current and degrade the light output power. It was shown that the VCSEL exhibits multiple transverse mode without ESD stress voltage. It was demonstrated that the device exhibits a weak but single fundamental mode with smaller beam divergence by increasing the stress voltage up t0 2.6 kV.

AB - The influence of electrostatic discharge (ESD) stress voltage on the device performance of 850 nm vertical-cavity surface-emitting lasers (VCSEL) was investigated. It was observed that the ESD effect induces dark-region defects, which acts as nonradiative recombination centers in the active layer and increase the leakage current and degrade the light output power. It was shown that the VCSEL exhibits multiple transverse mode without ESD stress voltage. It was demonstrated that the device exhibits a weak but single fundamental mode with smaller beam divergence by increasing the stress voltage up t0 2.6 kV.

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Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers

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