Effect of diamond like carbon layer on heat dissipation and optoelectronic performance of vertical-type InGaN light emitting diodes

Ray-Hua Horng; Wei Cheng Kao; Sin Liang Ou; Dong Sing Wuu

doi:10.1063/1.4764007

Effect of diamond like carbon layer on heat dissipation and optoelectronic performance of vertical-type InGaN light emitting diodes

Ray-Hua Horng^*, Wei Cheng Kao, Sin Liang Ou, Dong Sing Wuu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

This study reports the transfer of InGaN light-emitting diodes (LEDs) embedded with and without a diamond like carbon (DLC) layer to Si substrates. It also investigates the heat dissipation and output power performance after the addition of the DLC layer. The LED device with a DLC layer had a lower thermal resistance (13.2 K/W) and surface temperature (55.51-65.34 °C at 700 mA) than that without a DLC layer. This likely resulted from the fast heat dissipation of the DLC layer in both vertical and horizontal directions. The LED device with a DLC layer achieved a 20.8 improvement in output power.

Original language	English
Article number	171102
Journal	Applied Physics Letters
Volume	101
Issue number	17
DOIs	https://doi.org/10.1063/1.4764007
State	Published - 22 Oct 2012

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@article{9e6226540f5a4af6accc97fda293f6e1,

title = "Effect of diamond like carbon layer on heat dissipation and optoelectronic performance of vertical-type InGaN light emitting diodes",

abstract = "This study reports the transfer of InGaN light-emitting diodes (LEDs) embedded with and without a diamond like carbon (DLC) layer to Si substrates. It also investigates the heat dissipation and output power performance after the addition of the DLC layer. The LED device with a DLC layer had a lower thermal resistance (13.2 K/W) and surface temperature (55.51-65.34 °C at 700 mA) than that without a DLC layer. This likely resulted from the fast heat dissipation of the DLC layer in both vertical and horizontal directions. The LED device with a DLC layer achieved a 20.8 improvement in output power.",

author = "Ray-Hua Horng and Kao, {Wei Cheng} and Ou, {Sin Liang} and Wuu, {Dong Sing}",

year = "2012",

month = oct,

day = "22",

doi = "10.1063/1.4764007",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - Effect of diamond like carbon layer on heat dissipation and optoelectronic performance of vertical-type InGaN light emitting diodes

AU - Horng, Ray-Hua

AU - Kao, Wei Cheng

AU - Ou, Sin Liang

AU - Wuu, Dong Sing

PY - 2012/10/22

Y1 - 2012/10/22

N2 - This study reports the transfer of InGaN light-emitting diodes (LEDs) embedded with and without a diamond like carbon (DLC) layer to Si substrates. It also investigates the heat dissipation and output power performance after the addition of the DLC layer. The LED device with a DLC layer had a lower thermal resistance (13.2 K/W) and surface temperature (55.51-65.34 °C at 700 mA) than that without a DLC layer. This likely resulted from the fast heat dissipation of the DLC layer in both vertical and horizontal directions. The LED device with a DLC layer achieved a 20.8 improvement in output power.

AB - This study reports the transfer of InGaN light-emitting diodes (LEDs) embedded with and without a diamond like carbon (DLC) layer to Si substrates. It also investigates the heat dissipation and output power performance after the addition of the DLC layer. The LED device with a DLC layer had a lower thermal resistance (13.2 K/W) and surface temperature (55.51-65.34 °C at 700 mA) than that without a DLC layer. This likely resulted from the fast heat dissipation of the DLC layer in both vertical and horizontal directions. The LED device with a DLC layer achieved a 20.8 improvement in output power.

UR - http://www.scopus.com/inward/record.url?scp=84868027361&partnerID=8YFLogxK

U2 - 10.1063/1.4764007

DO - 10.1063/1.4764007

M3 - Article

AN - SCOPUS:84868027361

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 171102

ER -

Effect of diamond like carbon layer on heat dissipation and optoelectronic performance of vertical-type InGaN light emitting diodes

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