Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane
Y. L. Cheng, Y. L. Wang*, G. J. Hwang, M. L. O'Neill, E. J. Karwacki, Po-Tsun Liu, C. F. Chen
Research output: Contribution to journal › Article › peer-review
16Scopus
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