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Effect of deposition sequence and plasma treatment on ALCVD™ HfO 2 N-MOSFET properties
Chan Lim*, Yudong Kim, Tuo-Hung Hou, Jim Gutt, Steven Marcus, Christophe Pomarede, Eric Shero, Henk De Waard, Chris Werkhoven, Chen Lee, Jihane Tamim, Nirmal Chaudhary, Gennadi Bersuker, Joel Barnett, Chadwin Young, Peter Zeitzoff, George A. Brown, Mark Gardner, Robert W. Murto, Howard R. Huff
*Corresponding author for this work
Research output: Contribution to conference › Paper › peer-review