Abstract
A modified deposition sequence for ALCVD™ (Atomic Layer CVD™) [1] HfO2 was devised for the purpose of enhancing the layer quality. N-MOSFET performance with ALCVD™ HfO2 deposited using the modified deposition sequence, in conjunction with a subsequent plasma treatment, was demonstrated to reduce gate leakage current by over 3 orders of magnitude. Peak mobility and high field (1MV/cm) mobility were improved by 50% and 40%, respectively, when compared to conventional ALCVD™ HfO2.
Original language | English |
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Pages | 83-91 |
Number of pages | 9 |
State | Published - 1 Dec 2003 |
Event | Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States Duration: 20 Oct 2002 → 24 Oct 2002 |
Conference
Conference | Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues |
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Country/Territory | United States |
City | Salt Lake City, UT |
Period | 20/10/02 → 24/10/02 |