Effect of deposition sequence and plasma treatment on ALCVD™ HfO 2 N-MOSFET properties

Chan Lim; Yudong Kim; Tuo-Hung Hou; Jim Gutt; Steven Marcus; Christophe Pomarede; Eric Shero; Henk De Waard; Chris Werkhoven; Chen Lee; Jihane Tamim; Nirmal Chaudhary; Gennadi Bersuker; Joel Barnett; Chadwin Young; Peter Zeitzoff; George A. Brown; Mark Gardner; Robert W. Murto; Howard R. Huff

Effect of deposition sequence and plasma treatment on ALCVD™ HfO ₂ N-MOSFET properties

Chan Lim^*, Yudong Kim, Tuo-Hung Hou, Jim Gutt, Steven Marcus, Christophe Pomarede, Eric Shero, Henk De Waard, Chris Werkhoven, Chen Lee, Jihane Tamim, Nirmal Chaudhary, Gennadi Bersuker, Joel Barnett, Chadwin Young, Peter Zeitzoff, George A. Brown, Mark Gardner, Robert W. Murto, Howard R. Huff

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to conference › Paper › peer-review

Abstract

A modified deposition sequence for ALCVD™ (Atomic Layer CVD™) [1] HfO₂ was devised for the purpose of enhancing the layer quality. N-MOSFET performance with ALCVD™ HfO₂ deposited using the modified deposition sequence, in conjunction with a subsequent plasma treatment, was demonstrated to reduce gate leakage current by over 3 orders of magnitude. Peak mobility and high field (1MV/cm) mobility were improved by 50% and 40%, respectively, when compared to conventional ALCVD™ HfO₂.

Original language	English
Pages	83-91
Number of pages	9
State	Published - 1 Dec 2003
Event	Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States Duration: 20 Oct 2002 → 24 Oct 2002

Conference

Conference	Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues
Country/Territory	United States
City	Salt Lake City, UT
Period	20/10/02 → 24/10/02

Cite this

Lim, C., Kim, Y., Hou, T.-H., Gutt, J., Marcus, S., Pomarede, C., Shero, E., De Waard, H., Werkhoven, C., Lee, C., Tamim, J., Chaudhary, N., Bersuker, G., Barnett, J., Young, C., Zeitzoff, P., Brown, G. A., Gardner, M., Murto, R. W., & Huff, H. R. (2003). Effect of deposition sequence and plasma treatment on ALCVD™ HfO ₂ N-MOSFET properties. 83-91. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

Lim, Chan ; Kim, Yudong ; Hou, Tuo-Hung et al. / Effect of deposition sequence and plasma treatment on ALCVD™ HfO ₂ N-MOSFET properties. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.9 p.

@conference{8b7e857fef594f549a6006dd5f6fe5c3,

title = "Effect of deposition sequence and plasma treatment on ALCVD{\texttrademark} HfO 2 N-MOSFET properties",

abstract = "A modified deposition sequence for ALCVD{\texttrademark} (Atomic Layer CVD{\texttrademark}) [1] HfO2 was devised for the purpose of enhancing the layer quality. N-MOSFET performance with ALCVD{\texttrademark} HfO2 deposited using the modified deposition sequence, in conjunction with a subsequent plasma treatment, was demonstrated to reduce gate leakage current by over 3 orders of magnitude. Peak mobility and high field (1MV/cm) mobility were improved by 50% and 40%, respectively, when compared to conventional ALCVD{\texttrademark} HfO2.",

author = "Chan Lim and Yudong Kim and Tuo-Hung Hou and Jim Gutt and Steven Marcus and Christophe Pomarede and Eric Shero and {De Waard}, Henk and Chris Werkhoven and Chen Lee and Jihane Tamim and Nirmal Chaudhary and Gennadi Bersuker and Joel Barnett and Chadwin Young and Peter Zeitzoff and Brown, {George A.} and Mark Gardner and Murto, {Robert W.} and Huff, {Howard R.}",

year = "2003",

month = dec,

day = "1",

language = "English",

pages = "83--91",

note = "Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues ; Conference date: 20-10-2002 Through 24-10-2002",

}

Lim, C, Kim, Y, Hou, T-H, Gutt, J, Marcus, S, Pomarede, C, Shero, E, De Waard, H, Werkhoven, C, Lee, C, Tamim, J, Chaudhary, N, Bersuker, G, Barnett, J, Young, C, Zeitzoff, P, Brown, GA, Gardner, M, Murto, RW & Huff, HR 2003, 'Effect of deposition sequence and plasma treatment on ALCVD™ HfO ₂ N-MOSFET properties', Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States, 20/10/02 - 24/10/02 pp. 83-91.

Effect of deposition sequence and plasma treatment on ALCVD™ HfO ₂ N-MOSFET properties. / Lim, Chan; Kim, Yudong; Hou, Tuo-Hung et al.
2003. 83-91 Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Effect of deposition sequence and plasma treatment on ALCVD™ HfO 2 N-MOSFET properties

AU - Lim, Chan

AU - Kim, Yudong

AU - Hou, Tuo-Hung

AU - Gutt, Jim

AU - Marcus, Steven

AU - Pomarede, Christophe

AU - Shero, Eric

AU - De Waard, Henk

AU - Werkhoven, Chris

AU - Lee, Chen

AU - Tamim, Jihane

AU - Chaudhary, Nirmal

AU - Bersuker, Gennadi

AU - Barnett, Joel

AU - Young, Chadwin

AU - Zeitzoff, Peter

AU - Brown, George A.

AU - Gardner, Mark

AU - Murto, Robert W.

AU - Huff, Howard R.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - A modified deposition sequence for ALCVD™ (Atomic Layer CVD™) [1] HfO2 was devised for the purpose of enhancing the layer quality. N-MOSFET performance with ALCVD™ HfO2 deposited using the modified deposition sequence, in conjunction with a subsequent plasma treatment, was demonstrated to reduce gate leakage current by over 3 orders of magnitude. Peak mobility and high field (1MV/cm) mobility were improved by 50% and 40%, respectively, when compared to conventional ALCVD™ HfO2.

AB - A modified deposition sequence for ALCVD™ (Atomic Layer CVD™) [1] HfO2 was devised for the purpose of enhancing the layer quality. N-MOSFET performance with ALCVD™ HfO2 deposited using the modified deposition sequence, in conjunction with a subsequent plasma treatment, was demonstrated to reduce gate leakage current by over 3 orders of magnitude. Peak mobility and high field (1MV/cm) mobility were improved by 50% and 40%, respectively, when compared to conventional ALCVD™ HfO2.

UR - http://www.scopus.com/inward/record.url?scp=8744231054&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:8744231054

SP - 83

EP - 91

T2 - Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues

Y2 - 20 October 2002 through 24 October 2002

ER -

Lim C, Kim Y, Hou TH, Gutt J, Marcus S, Pomarede C et al.. Effect of deposition sequence and plasma treatment on ALCVD™ HfO ₂ N-MOSFET properties. 2003. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

Effect of deposition sequence and plasma treatment on ALCVD™ HfO ₂ N-MOSFET properties

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