Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs via Green Nanosecond Laser Crystallization

Hao-Tung Chung; Chun-Ting Chen; Yi-Shao Li; Yu-Wei Liu; Chan-Yu Liao; Wen-Hsien Huang; Jia-Min Shieh; Jun-Dao Luo; Wei-Shuo Li; Kai-Chi Chuang; Kuan-Neng Chen; Huang-Chung Cheng

doi:10.1109/LED.2021.3049329

Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs via Green Nanosecond Laser Crystallization

Hao-Tung Chung^*, Chun-Ting Chen, Yi-Shao Li, Yu-Wei Liu, Chan-Yu Liao, Wen-Hsien Huang, Jia-Min Shieh, Jun-Dao Luo, Wei-Shuo Li, Kai-Chi Chuang, Kuan-Neng Chen, Huang-Chung Cheng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

This letter reports the fabrication of polycrystalline silicon (poly-Si) tunnelingfield effect transistors(Tunneling FETs) using green nanosecond laser crystallization (GLC). During the GLC process, the Si is full-melted by laser scanning, hence the recrystallized poly-Si thin films with grain size as large as 1.2 mu m are attained. This makes it possible to fabricate tunnelingFETwith high-quali ty poly-Si thin films. Compare with the tunneling FETs fabricated by solid phase crystallization (SPC), the ones via GLC show better subthreshold swing (S.S) of 418 mV/dec. and larger on/ off ratio of 6.02 x 10(5). Moreover, the activation energy curve is also presented to further demonstrate the con nection between device performance and crystallinity of poly-Si thin films.

Original language	English
Article number	9314229
Pages (from-to)	164-167
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	42
Issue number	2
DOIs	https://doi.org/10.1109/LED.2021.3049329
State	Published - Feb 2021

Keywords

Green nanosecond laser crystallization (GLC)
polycrystalline silicon (poly-Si)
thin-film transistor (TFT)
tunneling field effect transistor (tunneling FET)

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10.1109/LED.2021.3049329

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Chung, H.-T., Chen, C.-T., Li, Y.-S., Liu, Y.-W., Liao, C.-Y., Huang, W.-H., Shieh, J.-M., Luo, J.-D., Li, W.-S., Chuang, K.-C., Chen, K.-N., & Cheng, H.-C. (2021). Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs via Green Nanosecond Laser Crystallization. Ieee Electron Device Letters, 42(2), 164-167. Article 9314229. https://doi.org/10.1109/LED.2021.3049329

@article{b256e8f1f5c844bcbc1765ccf34f06d0,

title = "Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs via Green Nanosecond Laser Crystallization",

abstract = "This letter reports the fabrication of polycrystalline silicon (poly-Si) tunnelingfield effect transistors(Tunneling FETs) using green nanosecond laser crystallization (GLC). During the GLC process, the Si is full-melted by laser scanning, hence the recrystallized poly-Si thin films with grain size as large as 1.2 mu m are attained. This makes it possible to fabricate tunnelingFETwith high-quali ty poly-Si thin films. Compare with the tunneling FETs fabricated by solid phase crystallization (SPC), the ones via GLC show better subthreshold swing (S.S) of 418 mV/dec. and larger on/ off ratio of 6.02 x 10(5). Moreover, the activation energy curve is also presented to further demonstrate the con nection between device performance and crystallinity of poly-Si thin films.",

keywords = "Green nanosecond laser crystallization (GLC), polycrystalline silicon (poly-Si), thin-film transistor (TFT), tunneling field effect transistor (tunneling FET)",

author = "Hao-Tung Chung and Chun-Ting Chen and Yi-Shao Li and Yu-Wei Liu and Chan-Yu Liao and Wen-Hsien Huang and Jia-Min Shieh and Jun-Dao Luo and Wei-Shuo Li and Kai-Chi Chuang and Kuan-Neng Chen and Huang-Chung Cheng",

year = "2021",

month = feb,

doi = "10.1109/LED.2021.3049329",

language = "English",

volume = "42",

pages = "164--167",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

Chung, H-T, Chen, C-T, Li, Y-S, Liu, Y-W, Liao, C-Y, Huang, W-H, Shieh, J-M, Luo, J-D, Li, W-S, Chuang, K-C, Chen, K-N & Cheng, H-C 2021, 'Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs via Green Nanosecond Laser Crystallization', Ieee Electron Device Letters, vol. 42, no. 2, 9314229, pp. 164-167. https://doi.org/10.1109/LED.2021.3049329

TY - JOUR

T1 - Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs via Green Nanosecond Laser Crystallization

AU - Chung, Hao-Tung

AU - Chen, Chun-Ting

AU - Li, Yi-Shao

AU - Liu, Yu-Wei

AU - Liao, Chan-Yu

AU - Huang, Wen-Hsien

AU - Shieh, Jia-Min

AU - Luo, Jun-Dao

AU - Li, Wei-Shuo

AU - Chuang, Kai-Chi

AU - Chen, Kuan-Neng

AU - Cheng, Huang-Chung

PY - 2021/2

Y1 - 2021/2

N2 - This letter reports the fabrication of polycrystalline silicon (poly-Si) tunnelingfield effect transistors(Tunneling FETs) using green nanosecond laser crystallization (GLC). During the GLC process, the Si is full-melted by laser scanning, hence the recrystallized poly-Si thin films with grain size as large as 1.2 mu m are attained. This makes it possible to fabricate tunnelingFETwith high-quali ty poly-Si thin films. Compare with the tunneling FETs fabricated by solid phase crystallization (SPC), the ones via GLC show better subthreshold swing (S.S) of 418 mV/dec. and larger on/ off ratio of 6.02 x 10(5). Moreover, the activation energy curve is also presented to further demonstrate the con nection between device performance and crystallinity of poly-Si thin films.

AB - This letter reports the fabrication of polycrystalline silicon (poly-Si) tunnelingfield effect transistors(Tunneling FETs) using green nanosecond laser crystallization (GLC). During the GLC process, the Si is full-melted by laser scanning, hence the recrystallized poly-Si thin films with grain size as large as 1.2 mu m are attained. This makes it possible to fabricate tunnelingFETwith high-quali ty poly-Si thin films. Compare with the tunneling FETs fabricated by solid phase crystallization (SPC), the ones via GLC show better subthreshold swing (S.S) of 418 mV/dec. and larger on/ off ratio of 6.02 x 10(5). Moreover, the activation energy curve is also presented to further demonstrate the con nection between device performance and crystallinity of poly-Si thin films.

KW - Green nanosecond laser crystallization (GLC)

KW - polycrystalline silicon (poly-Si)

KW - thin-film transistor (TFT)

KW - tunneling field effect transistor (tunneling FET)

U2 - 10.1109/LED.2021.3049329

DO - 10.1109/LED.2021.3049329

M3 - Article

SN - 0741-3106

VL - 42

SP - 164

EP - 167

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 2

M1 - 9314229

ER -

Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs via Green Nanosecond Laser Crystallization

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