Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs via Green Nanosecond Laser Crystallization

Hao-Tung Chung*, Chun-Ting Chen, Yi-Shao Li, Yu-Wei Liu, Chan-Yu Liao, Wen-Hsien Huang, Jia-Min Shieh, Jun-Dao Luo, Wei-Shuo Li, Kai-Chi Chuang, Kuan-Neng Chen, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This letter reports the fabrication of polycrystalline silicon (poly-Si) tunnelingfield effect transistors(Tunneling FETs) using green nanosecond laser crystallization (GLC). During the GLC process, the Si is full-melted by laser scanning, hence the recrystallized poly-Si thin films with grain size as large as 1.2 mu m are attained. This makes it possible to fabricate tunnelingFETwith high-quali ty poly-Si thin films. Compare with the tunneling FETs fabricated by solid phase crystallization (SPC), the ones via GLC show better subthreshold swing (S.S) of 418 mV/dec. and larger on/ off ratio of 6.02 x 10(5). Moreover, the activation energy curve is also presented to further demonstrate the con nection between device performance and crystallinity of poly-Si thin films.

Original languageEnglish
Article number9314229
Pages (from-to)164-167
Number of pages4
JournalIeee Electron Device Letters
Volume42
Issue number2
DOIs
StatePublished - Feb 2021

Keywords

  • Green nanosecond laser crystallization (GLC)
  • polycrystalline silicon (poly-Si)
  • thin-film transistor (TFT)
  • tunneling field effect transistor (tunneling FET)

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