Effect of coplanar probe pad design on noise figures of 0.35 μm MOSFETs

C. Y. Su; L. P. Chen; S. J. Chang; G. W. Huang; Y. P. Ho; B. M. Tseng; D. C. Lin; H. Y. Lee; J. F. Kuan; Y. M. Deng; C. L. Chen; L. Y. Leu; Kuei-Ann Wen; C. Y. Chang

doi:10.1049/el:20000904

Effect of coplanar probe pad design on noise figures of 0.35 μm MOSFETs

C. Y. Su^*, L. P. Chen, S. J. Chang, G. W. Huang, Y. P. Ho, B. M. Tseng, D. C. Lin, H. Y. Lee, J. F. Kuan, Y. M. Deng, C. L. Chen, L. Y. Leu, Kuei-Ann Wen, C. Y. Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The effects of different coplanar ground-signal-ground (GSG) probe pads on the noise figure characteristics of submicron MOSFETs are presented. Devices with top-level metal as probe pads shielded by grounded bottom-level metal possess the most appropriate probe pad structure for characterizing the noise performance of MOSFETs. Equivalent circuits of the probe pads are used to explain the different noise behaviours.

Original language	English
Pages (from-to)	1280-1281
Number of pages	2
Journal	Electronics Letters
Volume	36
Issue number	15
DOIs	https://doi.org/10.1049/el:20000904
State	Published - 20 Jul 2000

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@article{2a5df45a1cd145489377eba3f395d9b2,

title = "Effect of coplanar probe pad design on noise figures of 0.35 μm MOSFETs",

abstract = "The effects of different coplanar ground-signal-ground (GSG) probe pads on the noise figure characteristics of submicron MOSFETs are presented. Devices with top-level metal as probe pads shielded by grounded bottom-level metal possess the most appropriate probe pad structure for characterizing the noise performance of MOSFETs. Equivalent circuits of the probe pads are used to explain the different noise behaviours.",

author = "Su, {C. Y.} and Chen, {L. P.} and Chang, {S. J.} and Huang, {G. W.} and Ho, {Y. P.} and Tseng, {B. M.} and Lin, {D. C.} and Lee, {H. Y.} and Kuan, {J. F.} and Deng, {Y. M.} and Chen, {C. L.} and Leu, {L. Y.} and Kuei-Ann Wen and Chang, {C. Y.}",

year = "2000",

month = jul,

day = "20",

doi = "10.1049/el:20000904",

language = "English",

volume = "36",

pages = "1280--1281",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "15",

}

TY - JOUR

T1 - Effect of coplanar probe pad design on noise figures of 0.35 μm MOSFETs

AU - Su, C. Y.

AU - Chen, L. P.

AU - Chang, S. J.

AU - Huang, G. W.

AU - Ho, Y. P.

AU - Tseng, B. M.

AU - Lin, D. C.

AU - Lee, H. Y.

AU - Kuan, J. F.

AU - Deng, Y. M.

AU - Chen, C. L.

AU - Leu, L. Y.

AU - Wen, Kuei-Ann

AU - Chang, C. Y.

PY - 2000/7/20

Y1 - 2000/7/20

N2 - The effects of different coplanar ground-signal-ground (GSG) probe pads on the noise figure characteristics of submicron MOSFETs are presented. Devices with top-level metal as probe pads shielded by grounded bottom-level metal possess the most appropriate probe pad structure for characterizing the noise performance of MOSFETs. Equivalent circuits of the probe pads are used to explain the different noise behaviours.

AB - The effects of different coplanar ground-signal-ground (GSG) probe pads on the noise figure characteristics of submicron MOSFETs are presented. Devices with top-level metal as probe pads shielded by grounded bottom-level metal possess the most appropriate probe pad structure for characterizing the noise performance of MOSFETs. Equivalent circuits of the probe pads are used to explain the different noise behaviours.

UR - http://www.scopus.com/inward/record.url?scp=0034228635&partnerID=8YFLogxK

U2 - 10.1049/el:20000904

DO - 10.1049/el:20000904

M3 - Article

AN - SCOPUS:0034228635

SN - 0013-5194

VL - 36

SP - 1280

EP - 1281

JO - Electronics Letters

JF - Electronics Letters

IS - 15

ER -

Effect of coplanar probe pad design on noise figures of 0.35 μm MOSFETs

Abstract

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