Effect of coplanar probe pad design on noise figures of 0.35 μm MOSFETs

C. Y. Su*, L. P. Chen, S. J. Chang, G. W. Huang, Y. P. Ho, B. M. Tseng, D. C. Lin, H. Y. Lee, J. F. Kuan, Y. M. Deng, C. L. Chen, L. Y. Leu, Kuei-Ann Wen, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The effects of different coplanar ground-signal-ground (GSG) probe pads on the noise figure characteristics of submicron MOSFETs are presented. Devices with top-level metal as probe pads shielded by grounded bottom-level metal possess the most appropriate probe pad structure for characterizing the noise performance of MOSFETs. Equivalent circuits of the probe pads are used to explain the different noise behaviours.

Original languageEnglish
Pages (from-to)1280-1281
Number of pages2
JournalElectronics Letters
Volume36
Issue number15
DOIs
StatePublished - 20 Jul 2000

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