Effect of Compressive Stress on Evolution and Healing Kinetics of Artificial Voids in Highly (111)-Oriented Cu-Cu Wafer Bonding at 300 °c

Yew Chung Sermon Wu; Meiyi Li; Tung Yen Lai; Tsan Feng Lu; Yu Hsiang Wang; Jiun Wei Chang

doi:10.1149/2162-8777/abf16b

Effect of Compressive Stress on Evolution and Healing Kinetics of Artificial Voids in Highly (111)-Oriented Cu-Cu Wafer Bonding at 300 °c

Yew Chung Sermon Wu^*, Meiyi Li, Tung Yen Lai, Tsan Feng Lu, Yu Hsiang Wang, Jiun Wei Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Cu- Cu direct bonding has attracted much attention because it has been implemented in three-dimensional integrated circuits. The interfacial voids are inevitable since atomically smooth surfaces are not available. The presence of interfacial voids might lead to degraded reliability of devices. Cu-Cu bonding usually accompanies oxide-oxide bonding to form hybrid bonding. Compressive stress can occur at Cu-Cu bonded interface at elevated temperature. In this study, artificial voids were introduced at bonded interfaces. The effect of compressive stress on the evolution and the healing kinetics of interfacial voids was investigated at 300 °C.

Original language	English
Article number	044004
Journal	ECS Journal of Solid State Science and Technology
Volume	10
Issue number	4
DOIs	https://doi.org/10.1149/2162-8777/abf16b
State	Published - Apr 2021

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title = "Effect of Compressive Stress on Evolution and Healing Kinetics of Artificial Voids in Highly (111)-Oriented Cu-Cu Wafer Bonding at 300 °c",

abstract = "Cu- Cu direct bonding has attracted much attention because it has been implemented in three-dimensional integrated circuits. The interfacial voids are inevitable since atomically smooth surfaces are not available. The presence of interfacial voids might lead to degraded reliability of devices. Cu-Cu bonding usually accompanies oxide-oxide bonding to form hybrid bonding. Compressive stress can occur at Cu-Cu bonded interface at elevated temperature. In this study, artificial voids were introduced at bonded interfaces. The effect of compressive stress on the evolution and the healing kinetics of interfacial voids was investigated at 300 °C. ",

author = "Wu, {Yew Chung Sermon} and Meiyi Li and Lai, {Tung Yen} and Lu, {Tsan Feng} and Wang, {Yu Hsiang} and Chang, {Jiun Wei}",

note = "Publisher Copyright: {\textcopyright} 2021 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.",

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doi = "10.1149/2162-8777/abf16b",

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T1 - Effect of Compressive Stress on Evolution and Healing Kinetics of Artificial Voids in Highly (111)-Oriented Cu-Cu Wafer Bonding at 300 °c

AU - Wu, Yew Chung Sermon

AU - Li, Meiyi

AU - Lai, Tung Yen

AU - Lu, Tsan Feng

AU - Wang, Yu Hsiang

AU - Chang, Jiun Wei

PY - 2021/4

Y1 - 2021/4

N2 - Cu- Cu direct bonding has attracted much attention because it has been implemented in three-dimensional integrated circuits. The interfacial voids are inevitable since atomically smooth surfaces are not available. The presence of interfacial voids might lead to degraded reliability of devices. Cu-Cu bonding usually accompanies oxide-oxide bonding to form hybrid bonding. Compressive stress can occur at Cu-Cu bonded interface at elevated temperature. In this study, artificial voids were introduced at bonded interfaces. The effect of compressive stress on the evolution and the healing kinetics of interfacial voids was investigated at 300 °C.

AB - Cu- Cu direct bonding has attracted much attention because it has been implemented in three-dimensional integrated circuits. The interfacial voids are inevitable since atomically smooth surfaces are not available. The presence of interfacial voids might lead to degraded reliability of devices. Cu-Cu bonding usually accompanies oxide-oxide bonding to form hybrid bonding. Compressive stress can occur at Cu-Cu bonded interface at elevated temperature. In this study, artificial voids were introduced at bonded interfaces. The effect of compressive stress on the evolution and the healing kinetics of interfacial voids was investigated at 300 °C.

UR - http://www.scopus.com/inward/record.url?scp=85104776704&partnerID=8YFLogxK

U2 - 10.1149/2162-8777/abf16b

DO - 10.1149/2162-8777/abf16b

M3 - Article

AN - SCOPUS:85104776704

VL - 10

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 4

M1 - 044004

ER -

Effect of Compressive Stress on Evolution and Healing Kinetics of Artificial Voids in Highly (111)-Oriented Cu-Cu Wafer Bonding at 300 °c

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