Effect of Compressive Stress on Evolution and Healing Kinetics of Artificial Voids in Highly (111)-Oriented Cu-Cu Wafer Bonding at 300 °c

Yew Chung Sermon Wu*, Meiyi Li, Tung Yen Lai, Tsan Feng Lu, Yu Hsiang Wang, Jiun Wei Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Cu- Cu direct bonding has attracted much attention because it has been implemented in three-dimensional integrated circuits. The interfacial voids are inevitable since atomically smooth surfaces are not available. The presence of interfacial voids might lead to degraded reliability of devices. Cu-Cu bonding usually accompanies oxide-oxide bonding to form hybrid bonding. Compressive stress can occur at Cu-Cu bonded interface at elevated temperature. In this study, artificial voids were introduced at bonded interfaces. The effect of compressive stress on the evolution and the healing kinetics of interfacial voids was investigated at 300 °C.

Original languageEnglish
Article number044004
JournalECS Journal of Solid State Science and Technology
Volume10
Issue number4
DOIs
StatePublished - Apr 2021

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