Effect of CF 4 plasma pretreatment on low temperature oxides

Tzu Yun Chang; Hsiao Wei Chen; Tan Fu Lei; Tien-Sheng Chao

doi:10.1109/TED.2002.807451

Effect of CF ₄ plasma pretreatment on low temperature oxides

Tzu Yun Chang^*, Hsiao Wei Chen, Tan Fu Lei, Tien-Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

This study describes a novel technique for forming low temperature oxides (< 350°C) using a replacement metal gate process. Low temperature oxides were generated by N ₂ O plasma in a PECVD system with pretreatment in CF ₄ . Fabricated oxides demonstrate excellent current-voltage (I-V) characteristics, such as low leakage current, high breakdown charge and good reliability. Experimental results indicate that CF ₄ plasma treatment can significantly improve the mobility and resistance against hot carrier stress of MOSFETs. With excellent electrical properties, this technique is suitable for fabrication low temperature devices.

Original language	English
Pages (from-to)	2163-2170
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	49
Issue number	12
DOIs	https://doi.org/10.1109/TED.2002.807451
State	Published - 1 Dec 2002

Keywords

Low temperature oxides
Mobility and hot carrier stress
N O/CF plasma
Qbd
Replacement metal gate
TDDB

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10.1109/TED.2002.807451

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title = "Effect of CF 4 plasma pretreatment on low temperature oxides",

abstract = " This study describes a novel technique for forming low temperature oxides (< 350°C) using a replacement metal gate process. Low temperature oxides were generated by N 2 O plasma in a PECVD system with pretreatment in CF 4 . Fabricated oxides demonstrate excellent current-voltage (I-V) characteristics, such as low leakage current, high breakdown charge and good reliability. Experimental results indicate that CF 4 plasma treatment can significantly improve the mobility and resistance against hot carrier stress of MOSFETs. With excellent electrical properties, this technique is suitable for fabrication low temperature devices. ",

keywords = "Low temperature oxides, Mobility and hot carrier stress, N O/CF plasma, Qbd, Replacement metal gate, TDDB",

author = "Chang, {Tzu Yun} and Chen, {Hsiao Wei} and Lei, {Tan Fu} and Tien-Sheng Chao",

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T1 - Effect of CF 4 plasma pretreatment on low temperature oxides

AU - Chang, Tzu Yun

AU - Chen, Hsiao Wei

AU - Lei, Tan Fu

AU - Chao, Tien-Sheng

PY - 2002/12/1

Y1 - 2002/12/1

N2 - This study describes a novel technique for forming low temperature oxides (< 350°C) using a replacement metal gate process. Low temperature oxides were generated by N 2 O plasma in a PECVD system with pretreatment in CF 4 . Fabricated oxides demonstrate excellent current-voltage (I-V) characteristics, such as low leakage current, high breakdown charge and good reliability. Experimental results indicate that CF 4 plasma treatment can significantly improve the mobility and resistance against hot carrier stress of MOSFETs. With excellent electrical properties, this technique is suitable for fabrication low temperature devices.

AB - This study describes a novel technique for forming low temperature oxides (< 350°C) using a replacement metal gate process. Low temperature oxides were generated by N 2 O plasma in a PECVD system with pretreatment in CF 4 . Fabricated oxides demonstrate excellent current-voltage (I-V) characteristics, such as low leakage current, high breakdown charge and good reliability. Experimental results indicate that CF 4 plasma treatment can significantly improve the mobility and resistance against hot carrier stress of MOSFETs. With excellent electrical properties, this technique is suitable for fabrication low temperature devices.

KW - Low temperature oxides

KW - Mobility and hot carrier stress

KW - N O/CF plasma

KW - Qbd

KW - Replacement metal gate

KW - TDDB

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DO - 10.1109/TED.2002.807451

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EP - 2170

JO - Ieee Transactions On Electron Devices

JF - Ieee Transactions On Electron Devices

IS - 12

ER -

Effect of CF ₄ plasma pretreatment on low temperature oxides

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Keywords

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