Effect of CF 4 plasma pretreatment on low temperature oxides

Tzu Yun Chang*, Hsiao Wei Chen, Tan Fu Lei, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


This study describes a novel technique for forming low temperature oxides (< 350°C) using a replacement metal gate process. Low temperature oxides were generated by N 2 O plasma in a PECVD system with pretreatment in CF 4 . Fabricated oxides demonstrate excellent current-voltage (I-V) characteristics, such as low leakage current, high breakdown charge and good reliability. Experimental results indicate that CF 4 plasma treatment can significantly improve the mobility and resistance against hot carrier stress of MOSFETs. With excellent electrical properties, this technique is suitable for fabrication low temperature devices.

Original languageEnglish
Pages (from-to)2163-2170
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number12
StatePublished - 1 Dec 2002


  • Low temperature oxides
  • Mobility and hot carrier stress
  • N O/CF plasma
  • Qbd
  • Replacement metal gate
  • TDDB


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