Effect of boron doping on the structural properties of polycrystalline silicon films grown at reduced pressures

Horng-Chih Lin*, Hsiao Yi Lin, Chun Yen Chang, Tz Gwei Jung, P. J. Wang, Ray Chern Deng, Jandel Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The deposition and properties of in situ boron-doped polycrystalline silicon (poly-Si) films grown at 550°C were investigated using an ultrahigh vacuum chemical vapor deposition system. It is observed that, if the doping level is high enough, the boron incorporation would significantly reduce the deposition rate, impede the grain growth, and degrade the crystallinity of the poly-Si films. We also found that the preferential adsorption of boron atoms on the SiO2 surface at the initial stage of deposition shortened the incubation time of deposition. The property of trapping states at the grain boundary is also examined, and a density of about 4.7×1012 cm-2 is obtained for poly-Si films with a doping level less than 2.2×1019 cm-3.

Original languageEnglish
Pages (from-to)1572-1577
Number of pages6
JournalJournal of Applied Physics
Volume76
Issue number3
DOIs
StatePublished - 1994

Fingerprint

Dive into the research topics of 'Effect of boron doping on the structural properties of polycrystalline silicon films grown at reduced pressures'. Together they form a unique fingerprint.

Cite this