Effect of Annealing Treatment on Performance of Ga2O3 Conductive-Bridging Random-Access Memory

Kai Jhih Gan; Po Tsun Liu; Dun Bao Ruan; Chih Chieh Hsu; Yu Chuan Chiu; Simon M. Sze

doi:10.1007/s11664-020-08177-9

Effect of Annealing Treatment on Performance of Ga₂O₃ Conductive-Bridging Random-Access Memory

Kai Jhih Gan, Po Tsun Liu^*, Dun Bao Ruan, Chih Chieh Hsu, Yu Chuan Chiu, Simon M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The effect of annealing on the performance of conductive-bridging random-access memory (CBRAM) with an amorphous gallium oxide (a-Ga₂O₃) switching layer has been studied. After annealing at 200°C in N₂, a significant improvement of the bipolar resistive switching characteristics was observed. The a-Ga₂O₃ CBRAM showed good memory performance, with high switching endurance (up to 7.5 × 10² cycles) and high thermal stability. The resistive switching stability and electrical uniformity were also obviously improved. The memory window remained above 10⁵ over 7.5 × 10² endurance cycles at 85°C. Material characterization by x-ray photoelectron spectroscopy suggested that the improved uniformity of the resistive switching in the N₂-annealed Ga₂O₃ films may result from a higher density of oxygen vacancies. These results indicate great potential for such devices in future high-density nonvolatile memory applications.

Original language	English
Journal	Journal of Electronic Materials
DOIs	https://doi.org/10.1007/s11664-020-08177-9
State	Accepted/In press - 1 Jan 2020

Keywords

conductive-bridge random-access memory (CBRAM)
Gallium oxide (GaO)
oxygen vacancies
physical vapor deposition

Access to Document

10.1007/s11664-020-08177-9

Cite this

@article{ba63a1b811e048b9ac41034aa387d817,

title = "Effect of Annealing Treatment on Performance of Ga2O3 Conductive-Bridging Random-Access Memory",

abstract = "The effect of annealing on the performance of conductive-bridging random-access memory (CBRAM) with an amorphous gallium oxide (a-Ga2O3) switching layer has been studied. After annealing at 200°C in N2, a significant improvement of the bipolar resistive switching characteristics was observed. The a-Ga2O3 CBRAM showed good memory performance, with high switching endurance (up to 7.5 × 102 cycles) and high thermal stability. The resistive switching stability and electrical uniformity were also obviously improved. The memory window remained above 105 over 7.5 × 102 endurance cycles at 85°C. Material characterization by x-ray photoelectron spectroscopy suggested that the improved uniformity of the resistive switching in the N2-annealed Ga2O3 films may result from a higher density of oxygen vacancies. These results indicate great potential for such devices in future high-density nonvolatile memory applications.",

keywords = "conductive-bridge random-access memory (CBRAM), Gallium oxide (GaO), oxygen vacancies, physical vapor deposition",

author = "Gan, {Kai Jhih} and Liu, {Po Tsun} and Ruan, {Dun Bao} and Hsu, {Chih Chieh} and Chiu, {Yu Chuan} and Sze, {Simon M.}",

year = "2020",

month = jan,

day = "1",

doi = "10.1007/s11664-020-08177-9",

language = "English",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

}

TY - JOUR

T1 - Effect of Annealing Treatment on Performance of Ga2O3 Conductive-Bridging Random-Access Memory

AU - Gan, Kai Jhih

AU - Liu, Po Tsun

AU - Ruan, Dun Bao

AU - Hsu, Chih Chieh

AU - Chiu, Yu Chuan

AU - Sze, Simon M.

PY - 2020/1/1

Y1 - 2020/1/1

N2 - The effect of annealing on the performance of conductive-bridging random-access memory (CBRAM) with an amorphous gallium oxide (a-Ga2O3) switching layer has been studied. After annealing at 200°C in N2, a significant improvement of the bipolar resistive switching characteristics was observed. The a-Ga2O3 CBRAM showed good memory performance, with high switching endurance (up to 7.5 × 102 cycles) and high thermal stability. The resistive switching stability and electrical uniformity were also obviously improved. The memory window remained above 105 over 7.5 × 102 endurance cycles at 85°C. Material characterization by x-ray photoelectron spectroscopy suggested that the improved uniformity of the resistive switching in the N2-annealed Ga2O3 films may result from a higher density of oxygen vacancies. These results indicate great potential for such devices in future high-density nonvolatile memory applications.

AB - The effect of annealing on the performance of conductive-bridging random-access memory (CBRAM) with an amorphous gallium oxide (a-Ga2O3) switching layer has been studied. After annealing at 200°C in N2, a significant improvement of the bipolar resistive switching characteristics was observed. The a-Ga2O3 CBRAM showed good memory performance, with high switching endurance (up to 7.5 × 102 cycles) and high thermal stability. The resistive switching stability and electrical uniformity were also obviously improved. The memory window remained above 105 over 7.5 × 102 endurance cycles at 85°C. Material characterization by x-ray photoelectron spectroscopy suggested that the improved uniformity of the resistive switching in the N2-annealed Ga2O3 films may result from a higher density of oxygen vacancies. These results indicate great potential for such devices in future high-density nonvolatile memory applications.

KW - conductive-bridge random-access memory (CBRAM)

KW - Gallium oxide (GaO)

KW - oxygen vacancies

KW - physical vapor deposition

UR - http://www.scopus.com/inward/record.url?scp=85084665591&partnerID=8YFLogxK

U2 - 10.1007/s11664-020-08177-9

DO - 10.1007/s11664-020-08177-9

M3 - Article

AN - SCOPUS:85084665591

SN - 0361-5235

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

ER -

Effect of Annealing Treatment on Performance of Ga₂O₃ Conductive-Bridging Random-Access Memory

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this