Effect of annealing on defect elimination for high mobility amorphous indium-zinc-tin-oxide thin-film transistor

Chur Shyang Fuh; Po-Tsun Liu; Wei Hsun Huang; Simon M. Sze

doi:10.1109/LED.2014.2354598

Effect of annealing on defect elimination for high mobility amorphous indium-zinc-tin-oxide thin-film transistor

Chur Shyang Fuh^*, Po-Tsun Liu, Wei Hsun Huang, Simon M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

74 Scopus citations

Abstract

This letter studies the correlation of postannealing treatment on the electrical performance of amorphous In-Zn-Sn-O thin-film transistor (a-IZTO TFT). The 400 °C annealed a-IZTO TFT exhibits a superior performance with field-effect mobility of 39.6 cm²/Vs, threshold voltage (V_th) of -2.8 V, and subthreshold swing of 0.25 V/decade. Owing to the structural relaxation by 400 °C annealing, both trap states of a-IZTO film and the interface trap states at the a-IZTO/SiO₂ interface decrease to 2.16 × 10¹⁷ cm^-3 eV^-1 and 4.38 × 10¹² cm^-2 eV^-1, respectively. The positive bias stability of 400 °C annealed a-IZTO TFTs is also effectively improved with a V_th shift of 0.92 V.

Original language	English
Article number	6899612
Pages (from-to)	1103-1105
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	11
DOIs	https://doi.org/10.1109/LED.2014.2354598
State	Published - Nov 2014

Keywords

high mobility TFTs
In-Zn-Sn-O TFTs

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title = "Effect of annealing on defect elimination for high mobility amorphous indium-zinc-tin-oxide thin-film transistor",

abstract = "This letter studies the correlation of postannealing treatment on the electrical performance of amorphous In-Zn-Sn-O thin-film transistor (a-IZTO TFT). The 400 °C annealed a-IZTO TFT exhibits a superior performance with field-effect mobility of 39.6 cm2/Vs, threshold voltage (Vth) of -2.8 V, and subthreshold swing of 0.25 V/decade. Owing to the structural relaxation by 400 °C annealing, both trap states of a-IZTO film and the interface trap states at the a-IZTO/SiO2 interface decrease to 2.16 × 1017 cm-3 eV-1 and 4.38 × 1012 cm-2 eV-1, respectively. The positive bias stability of 400 °C annealed a-IZTO TFTs is also effectively improved with a Vth shift of 0.92 V.",

keywords = "high mobility TFTs, In-Zn-Sn-O TFTs",

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AU - Fuh, Chur Shyang

AU - Liu, Po-Tsun

AU - Huang, Wei Hsun

AU - Sze, Simon M.

PY - 2014/11

Y1 - 2014/11

N2 - This letter studies the correlation of postannealing treatment on the electrical performance of amorphous In-Zn-Sn-O thin-film transistor (a-IZTO TFT). The 400 °C annealed a-IZTO TFT exhibits a superior performance with field-effect mobility of 39.6 cm2/Vs, threshold voltage (Vth) of -2.8 V, and subthreshold swing of 0.25 V/decade. Owing to the structural relaxation by 400 °C annealing, both trap states of a-IZTO film and the interface trap states at the a-IZTO/SiO2 interface decrease to 2.16 × 1017 cm-3 eV-1 and 4.38 × 1012 cm-2 eV-1, respectively. The positive bias stability of 400 °C annealed a-IZTO TFTs is also effectively improved with a Vth shift of 0.92 V.

AB - This letter studies the correlation of postannealing treatment on the electrical performance of amorphous In-Zn-Sn-O thin-film transistor (a-IZTO TFT). The 400 °C annealed a-IZTO TFT exhibits a superior performance with field-effect mobility of 39.6 cm2/Vs, threshold voltage (Vth) of -2.8 V, and subthreshold swing of 0.25 V/decade. Owing to the structural relaxation by 400 °C annealing, both trap states of a-IZTO film and the interface trap states at the a-IZTO/SiO2 interface decrease to 2.16 × 1017 cm-3 eV-1 and 4.38 × 1012 cm-2 eV-1, respectively. The positive bias stability of 400 °C annealed a-IZTO TFTs is also effectively improved with a Vth shift of 0.92 V.

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KW - In-Zn-Sn-O TFTs

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Effect of annealing on defect elimination for high mobility amorphous indium-zinc-tin-oxide thin-film transistor

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Keywords

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