Effect of annealing ambient on the characteristics of a-IGZO thin film transistors

Cheng I. Lin; Tung Wei Yen; Horng-Chih Lin; Tiao Yuan Huang; Yee Shin Lee

doi:10.1109/INEC.2011.5991738

Effect of annealing ambient on the characteristics of a-IGZO thin film transistors

Cheng I. Lin^*, Tung Wei Yen, Horng-Chih Lin, Tiao Yuan Huang, Yee Shin Lee

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

We investigated the characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) whose channel was deposited with different oxygen flows, and were annealed at different annealing temperatures and ambient. This study indicates that annealing in forming gas and oxygen ambient indeed improve the transfer characteristics, resulting in better threshold voltage (Vth) and sub-threshold swing (SS), compared with those by high vacuum annealing.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991738
State	Published - 26 Sep 2011
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 21 Jun 2011 → 24 Jun 2011

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Conference

Conference	4th IEEE International Nanoelectronics Conference, INEC 2011
Country/Territory	Taiwan
City	Tao-Yuan
Period	21/06/11 → 24/06/11

Keywords

a-IGZO
annealing ambient
TFT

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10.1109/INEC.2011.5991738

Cite this

@inproceedings{e009072b3bd04bd29f55e91a96d10cdc,

title = "Effect of annealing ambient on the characteristics of a-IGZO thin film transistors",

abstract = "We investigated the characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) whose channel was deposited with different oxygen flows, and were annealed at different annealing temperatures and ambient. This study indicates that annealing in forming gas and oxygen ambient indeed improve the transfer characteristics, resulting in better threshold voltage (Vth) and sub-threshold swing (SS), compared with those by high vacuum annealing.",

keywords = "a-IGZO, annealing ambient, TFT",

author = "Lin, {Cheng I.} and Yen, {Tung Wei} and Horng-Chih Lin and Huang, {Tiao Yuan} and Lee, {Yee Shin}",

year = "2011",

month = sep,

day = "26",

doi = "10.1109/INEC.2011.5991738",

language = "English",

isbn = "9781457703799",

series = "Proceedings - International NanoElectronics Conference, INEC",

booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",

note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",

}

Lin, CI, Yen, TW, Lin, H-C, Huang, TY & Lee, YS 2011, Effect of annealing ambient on the characteristics of a-IGZO thin film transistors. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991738, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 21/06/11. https://doi.org/10.1109/INEC.2011.5991738

Effect of annealing ambient on the characteristics of a-IGZO thin film transistors. / Lin, Cheng I.; Yen, Tung Wei; Lin, Horng-Chih et al.
4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991738 (Proceedings - International NanoElectronics Conference, INEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of annealing ambient on the characteristics of a-IGZO thin film transistors

AU - Lin, Cheng I.

AU - Yen, Tung Wei

AU - Lin, Horng-Chih

AU - Huang, Tiao Yuan

AU - Lee, Yee Shin

PY - 2011/9/26

Y1 - 2011/9/26

N2 - We investigated the characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) whose channel was deposited with different oxygen flows, and were annealed at different annealing temperatures and ambient. This study indicates that annealing in forming gas and oxygen ambient indeed improve the transfer characteristics, resulting in better threshold voltage (Vth) and sub-threshold swing (SS), compared with those by high vacuum annealing.

AB - We investigated the characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) whose channel was deposited with different oxygen flows, and were annealed at different annealing temperatures and ambient. This study indicates that annealing in forming gas and oxygen ambient indeed improve the transfer characteristics, resulting in better threshold voltage (Vth) and sub-threshold swing (SS), compared with those by high vacuum annealing.

KW - a-IGZO

KW - annealing ambient

KW - TFT

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U2 - 10.1109/INEC.2011.5991738

DO - 10.1109/INEC.2011.5991738

M3 - Conference contribution

AN - SCOPUS:80052987456

SN - 9781457703799

T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011

Y2 - 21 June 2011 through 24 June 2011

ER -

Effect of annealing ambient on the characteristics of a-IGZO thin film transistors

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