Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Yi Keng Fu; Yu Hsuan Lu; Ren Hao Jiang; Bo Chun Chen; Yen Hsiang Fang; Rong Xuan; Yan Kuin Su; Chia Feng Lin; Jenn-Fang Chen

doi:10.1016/j.sse.2011.04.018

Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Yi Keng Fu^*, Yu Hsuan Lu, Ren Hao Jiang, Bo Chun Chen, Yen Hsiang Fang, Rong Xuan, Yan Kuin Su, Chia Feng Lin, Jenn-Fang Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barriers (QBs) are grown by atmospheric pressure metalorganic vapor phase epitaxy. The indium mole fraction of AlInGaN QB could be enhanced as we increased the TMG flow rate. Both the wavelength shift in EL spectra and forward voltage at 20 mA current injection were reduced by using AlInGaN QB. Under 100 mA current injection, the LED output power with Al_0.089In _0.035Ga_0.876N QB can be enhanced by 15.9%, compared to LED with GaN QB. It should be attributed to a reduction of lattice mismatch induced polarization mismatch in the active layer.

Original language	English
Pages (from-to)	142-145
Number of pages	4
Journal	Solid-State Electronics
Volume	62
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2011.04.018
State	Published - Aug 2011

Keywords

AlInGaN
Light-emitting diodes
Metalorganic vapor phase epitaxy
Polarization
Quaternary

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10.1016/j.sse.2011.04.018

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Fu, Y. K., Lu, Y. H., Jiang, R. H., Chen, B. C., Fang, Y. H., Xuan, R., Su, Y. K., Lin, C. F., & Chen, J.-F. (2011). Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy. Solid-State Electronics, 62(1), 142-145. https://doi.org/10.1016/j.sse.2011.04.018

@article{348d456a30bd408ba85543ce38f2978a,

title = "Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy",

abstract = "Near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barriers (QBs) are grown by atmospheric pressure metalorganic vapor phase epitaxy. The indium mole fraction of AlInGaN QB could be enhanced as we increased the TMG flow rate. Both the wavelength shift in EL spectra and forward voltage at 20 mA current injection were reduced by using AlInGaN QB. Under 100 mA current injection, the LED output power with Al0.089In 0.035Ga0.876N QB can be enhanced by 15.9%, compared to LED with GaN QB. It should be attributed to a reduction of lattice mismatch induced polarization mismatch in the active layer.",

keywords = "AlInGaN, Light-emitting diodes, Metalorganic vapor phase epitaxy, Polarization, Quaternary",

author = "Fu, {Yi Keng} and Lu, {Yu Hsuan} and Jiang, {Ren Hao} and Chen, {Bo Chun} and Fang, {Yen Hsiang} and Rong Xuan and Su, {Yan Kuin} and Lin, {Chia Feng} and Jenn-Fang Chen",

year = "2011",

month = aug,

doi = "10.1016/j.sse.2011.04.018",

language = "English",

volume = "62",

pages = "142--145",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "1",

}

Fu, YK, Lu, YH, Jiang, RH, Chen, BC, Fang, YH, Xuan, R, Su, YK, Lin, CF & Chen, J-F 2011, 'Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy', Solid-State Electronics, vol. 62, no. 1, pp. 142-145. https://doi.org/10.1016/j.sse.2011.04.018

Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy. / Fu, Yi Keng; Lu, Yu Hsuan; Jiang, Ren Hao et al.
In: Solid-State Electronics, Vol. 62, No. 1, 08.2011, p. 142-145.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

AU - Fu, Yi Keng

AU - Lu, Yu Hsuan

AU - Jiang, Ren Hao

AU - Chen, Bo Chun

AU - Fang, Yen Hsiang

AU - Xuan, Rong

AU - Su, Yan Kuin

AU - Lin, Chia Feng

AU - Chen, Jenn-Fang

PY - 2011/8

Y1 - 2011/8

N2 - Near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barriers (QBs) are grown by atmospheric pressure metalorganic vapor phase epitaxy. The indium mole fraction of AlInGaN QB could be enhanced as we increased the TMG flow rate. Both the wavelength shift in EL spectra and forward voltage at 20 mA current injection were reduced by using AlInGaN QB. Under 100 mA current injection, the LED output power with Al0.089In 0.035Ga0.876N QB can be enhanced by 15.9%, compared to LED with GaN QB. It should be attributed to a reduction of lattice mismatch induced polarization mismatch in the active layer.

AB - Near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barriers (QBs) are grown by atmospheric pressure metalorganic vapor phase epitaxy. The indium mole fraction of AlInGaN QB could be enhanced as we increased the TMG flow rate. Both the wavelength shift in EL spectra and forward voltage at 20 mA current injection were reduced by using AlInGaN QB. Under 100 mA current injection, the LED output power with Al0.089In 0.035Ga0.876N QB can be enhanced by 15.9%, compared to LED with GaN QB. It should be attributed to a reduction of lattice mismatch induced polarization mismatch in the active layer.

KW - AlInGaN

KW - Light-emitting diodes

KW - Metalorganic vapor phase epitaxy

KW - Polarization

KW - Quaternary

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DO - 10.1016/j.sse.2011.04.018

M3 - Article

AN - SCOPUS:79957929474

SN - 0038-1101

VL - 62

SP - 142

EP - 145

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

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