@inproceedings{7bf3c8a190e547d9808c2d751fd01010,
title = "E-band RF-to-DC converter using Schottky diode in 0.18-μm CMOS technology",
abstract = "This paper demonstrates a millimeter-wave RF-to-DC converter based on Schottky-barrier diodes using 0.18-μm CMOS technology. The Schottky-barrier diode has a cutoff frequency of 400 GHz and a low turn-on voltage of 0.3 V. In the RF-to-DC quadrupler, the difference in turn-on voltages between the Schottky-barrier diode and n-well to p-substrate parasitic pn junction prevents the pn junction from turning on with an effect similar to the Schottky diode clamp in Schottky TTL circuits. The input matching has a better than 10 dB return loss from 50 GHz to 100 GHz. The RF-to-DC quadrupler generates a 3.15 V DC voltage at 84 GHz.",
keywords = "CMOS, RF-to-DC converter, Schottky-barrier diode, millimeter-wave",
author = "Chang, {Wei Ling} and Chin-Chun Meng and Fu, {Tzu Chien} and Huang, {Guo Wei}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE MTT-S International Microwave Symposium, IMS 2016 ; Conference date: 22-05-2016 Through 27-05-2016",
year = "2016",
month = aug,
day = "9",
doi = "10.1109/MWSYM.2016.7540246",
language = "English",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 IEEE MTT-S International Microwave Symposium, IMS 2016",
address = "美國",
}