DYNAMIC STRESSING OF THIN OXIDES.

Y. Fong*, I. C. Chen, S. Holland, J. Lee, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

33 Scopus citations

Abstract

The breakdown of thin oxides due to dc stressing and unipolarity and bipolarity dynamic stressing has been compared. For dynamic stressing, the total integrated charge-to-breakdown, Q//B//D, depend on both the pulse width and duty cycle of the stressing voltage. Unipolarity and bipolarity stressing produce similar results. In all cases, both Q//B//D and t//B//D of dynamic stressing are greater than those of dc stressing. For 0. 1-ms pulses, Q//B//D and t//B//D are about four times larger than what dc stressing would predict. The main reason for the higher Q//B//D and t//B//D under dynamic stressing is reduced hole trapping at localized weak oxide areas. A transient hole generation and relaxation model is proposed to quantitatively explain the increase in Q//B//D for dynamic stressing.

Original languageEnglish
Pages (from-to)664-667
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1986

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