Dynamic IR drop estimation at gate level with standard library information

Mu Shun Matt Lee, Kuo Sheng Lai, Chia Ling Hsu, Chien-Nan Liu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

In the nanometer era, IR-drop has become one of the critical issues in current VLSI designs. Although checking this problem earlier can speed up the analysis, not many tools are available now due to the limited design information. Most existing approaches at gate level require additional characterization to consider the effects of different resistances on supply lines. Therefore, an analytical method is proposed to estimate the IR-drop values without extra information. After modifying the data stored in standard libraries (.lib) and the events stored in activity files (.vcd), using the previous method [2] can also obtain accurate supply current waveforms and IR-drop values for any given supply resistance, as demonstrated by the experiments on several benchmark circuits.

Original languageEnglish
Title of host publicationISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems
Subtitle of host publicationNano-Bio Circuit Fabrics and Systems
Pages2606-2609
Number of pages4
DOIs
StatePublished - 31 Aug 2010
Event2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, ISCAS 2010 - Paris, France
Duration: 30 May 20102 Jun 2010

Publication series

NameISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems

Conference

Conference2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, ISCAS 2010
Country/TerritoryFrance
CityParis
Period30/05/102/06/10

Keywords

  • Gate-level
  • IR drop estimation
  • Standard library

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