TY - JOUR
T1 - Dynamic depletion SOI MOSFET model for SPICE
AU - Sinitsky, Dennis
AU - Fung, Samuel
AU - Tang, Stephen
AU - Su, Pin
AU - Chan, Mansun
AU - Ko, Ping
AU - Hu, Chen-Ming
PY - 1998
Y1 - 1998
N2 - We show using measurements, that a transition between partial and full depletion (PD and FD) modes of operation as terminal voltages vary with time (dynamic depletion) has a strong impact on thin film SOI MOSFET characteristics. A model incorporating this effect is presented. It includes floating body, backgate, and body contact nodes, as well as impact ionization, GIDL, diode leakage and parasitic bipolar currents. Self-heating is modeled by an auxiliary RthCth circuit. The model uses a single smooth equation over all operating regimes for each current and charge and is fully scalable with Tsi, Tbox, Tox, W, and L.
AB - We show using measurements, that a transition between partial and full depletion (PD and FD) modes of operation as terminal voltages vary with time (dynamic depletion) has a strong impact on thin film SOI MOSFET characteristics. A model incorporating this effect is presented. It includes floating body, backgate, and body contact nodes, as well as impact ionization, GIDL, diode leakage and parasitic bipolar currents. Self-heating is modeled by an auxiliary RthCth circuit. The model uses a single smooth equation over all operating regimes for each current and charge and is fully scalable with Tsi, Tbox, Tox, W, and L.
UR - http://www.scopus.com/inward/record.url?scp=0031630541&partnerID=8YFLogxK
U2 - 10.1109/VLSIT.1998.689222
DO - 10.1109/VLSIT.1998.689222
M3 - Conference article
AN - SCOPUS:0031630541
SN - 0743-1562
SP - 114
EP - 115
JO - Digest of Technical Papers - Symposium on VLSI Technology
JF - Digest of Technical Papers - Symposium on VLSI Technology
T2 - Proceedings of the 1998 Symposium on VLSI Technology
Y2 - 9 June 1998 through 11 June 1998
ER -