Dummy-Gate Structure to Improve Turn-on Speed of Silicon-Controlled Rectifier (SCR) Device for Effective Electrostatic Discharge (ESD) Protection

Ming-Dou Ker; Kuo Chun Hsu

doi:10.1143/JJAP.42.L1366

Dummy-Gate Structure to Improve Turn-on Speed of Silicon-Controlled Rectifier (SCR) Device for Effective Electrostatic Discharge (ESD) Protection

Ming-Dou Ker^*, Kuo Chun Hsu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Turn-on speed is the main concern for on-chip electrostatic discharge (ESD) protection device, especially in deep submicron complementary metal-oxide semiconductors (CMOS) processes with ultra-thin gate oxide. A novel dummy-gate-blocking silicon-controlled rectifier (SCR) device with substrate-triggered technique is proposed to improve the turn-on speed of SCR device for using in on-chip ESD protection circuit to effectively protect the much thinner gate oxide. From the experimental results, the switching voltage, turn-on resistance, and turn-on time of substrate-triggered SCR (STSCR) device with dummy-gate structure have been efficiently improved, as compared with the normal SCR with shallow trench isolation (STI) structure.

Original language	English
Pages (from-to)	L1366-L1368
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	42
Issue number	11 B
DOIs	https://doi.org/10.1143/JJAP.42.L1366
State	Published - 15 Nov 2003

Keywords

Dummy gate
Electrostatic discharge (ESD)
ESD protection
Silicon controlled rectifier (SCR)
Substrate-triggered technique

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10.1143/JJAP.42.L1366

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title = "Dummy-Gate Structure to Improve Turn-on Speed of Silicon-Controlled Rectifier (SCR) Device for Effective Electrostatic Discharge (ESD) Protection",

abstract = "Turn-on speed is the main concern for on-chip electrostatic discharge (ESD) protection device, especially in deep submicron complementary metal-oxide semiconductors (CMOS) processes with ultra-thin gate oxide. A novel dummy-gate-blocking silicon-controlled rectifier (SCR) device with substrate-triggered technique is proposed to improve the turn-on speed of SCR device for using in on-chip ESD protection circuit to effectively protect the much thinner gate oxide. From the experimental results, the switching voltage, turn-on resistance, and turn-on time of substrate-triggered SCR (STSCR) device with dummy-gate structure have been efficiently improved, as compared with the normal SCR with shallow trench isolation (STI) structure.",

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T1 - Dummy-Gate Structure to Improve Turn-on Speed of Silicon-Controlled Rectifier (SCR) Device for Effective Electrostatic Discharge (ESD) Protection

AU - Ker, Ming-Dou

AU - Hsu, Kuo Chun

PY - 2003/11/15

Y1 - 2003/11/15

N2 - Turn-on speed is the main concern for on-chip electrostatic discharge (ESD) protection device, especially in deep submicron complementary metal-oxide semiconductors (CMOS) processes with ultra-thin gate oxide. A novel dummy-gate-blocking silicon-controlled rectifier (SCR) device with substrate-triggered technique is proposed to improve the turn-on speed of SCR device for using in on-chip ESD protection circuit to effectively protect the much thinner gate oxide. From the experimental results, the switching voltage, turn-on resistance, and turn-on time of substrate-triggered SCR (STSCR) device with dummy-gate structure have been efficiently improved, as compared with the normal SCR with shallow trench isolation (STI) structure.

AB - Turn-on speed is the main concern for on-chip electrostatic discharge (ESD) protection device, especially in deep submicron complementary metal-oxide semiconductors (CMOS) processes with ultra-thin gate oxide. A novel dummy-gate-blocking silicon-controlled rectifier (SCR) device with substrate-triggered technique is proposed to improve the turn-on speed of SCR device for using in on-chip ESD protection circuit to effectively protect the much thinner gate oxide. From the experimental results, the switching voltage, turn-on resistance, and turn-on time of substrate-triggered SCR (STSCR) device with dummy-gate structure have been efficiently improved, as compared with the normal SCR with shallow trench isolation (STI) structure.

KW - Dummy gate

KW - Electrostatic discharge (ESD)

KW - ESD protection

KW - Silicon controlled rectifier (SCR)

KW - Substrate-triggered technique

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

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ER -

Dummy-Gate Structure to Improve Turn-on Speed of Silicon-Controlled Rectifier (SCR) Device for Effective Electrostatic Discharge (ESD) Protection

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