Original language | English |
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Patent number | US 8,072,818 B2 |
State | Published - 6 Dec 2011 |
Dual-Threshold-Voltage Two-Port Sub-threshold SRAM Cell Apparatus
Po-Tsang Huang (Inventor), Wei Hwang (Inventor)
Research output: Patent
Po-Tsang Huang (Inventor), Wei Hwang (Inventor)
Research output: Patent
Original language | English |
---|---|
Patent number | US 8,072,818 B2 |
State | Published - 6 Dec 2011 |