Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits

Chun Yu Lin; Ming-Dou Ker

doi:10.1109/ICSICT.2010.5667382

Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits

Chun Yu Lin^*, Ming-Dou Ker

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.

Original language	English
Title of host publication	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	707-709
Number of pages	3
DOIs	https://doi.org/10.1109/ICSICT.2010.5667382
State	Published - 1 Dec 2010
Event	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 1 Nov 2010 → 4 Nov 2010

Publication series

Name	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	1/11/10 → 4/11/10

Keywords

Electrostatic discharges (ESD)
Radio-frequency integrated circuit (RF IC)
Silicon-controlled rectifier (SCR)

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10.1109/ICSICT.2010.5667382

Cite this

Lin, C. Y., & Ker, M-D. (2010). Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 707-709). [5667382] (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667382

Lin, Chun Yu ; Ker, Ming-Dou. / Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. pp. 707-709 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{d4e8d3f263d94fa8bcc8c4cba2ef4524,

title = "Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits",

abstract = "Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.",

keywords = "Electrostatic discharges (ESD), Radio-frequency integrated circuit (RF IC), Silicon-controlled rectifier (SCR)",

author = "Lin, {Chun Yu} and Ming-Dou Ker",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/ICSICT.2010.5667382",

language = "English",

isbn = "9781424457984",

series = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

pages = "707--709",

booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 01-11-2010 Through 04-11-2010",

}

Lin, CY & Ker, M-D 2010, Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667382, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 707-709, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 1/11/10. https://doi.org/10.1109/ICSICT.2010.5667382

Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. / Lin, Chun Yu; Ker, Ming-Dou.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 707-709 5667382 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits

AU - Lin, Chun Yu

AU - Ker, Ming-Dou

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.

AB - Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.

KW - Electrostatic discharges (ESD)

KW - Radio-frequency integrated circuit (RF IC)

KW - Silicon-controlled rectifier (SCR)

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DO - 10.1109/ICSICT.2010.5667382

M3 - Conference contribution

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SN - 9781424457984

T3 - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

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BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

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Lin CY, Ker M-D. Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 707-709. 5667382. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2010.5667382

Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits

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