Dual metal gates with band-edge work functions on novel HfLaO high-k gate dielectric

X. P. Wang; C. Shen; Ming Fu Li; H. Y. Yu; Yiyang Sun; Y. P. Feng; Andy Lim; Hwang Wan Sik; Albert Chin; Y. C. Yeo; Patrick Lo; D. L. Kwong

doi:10.1142/9781848164079_0006

Dual metal gates with band-edge work functions on novel HfLaO high-k gate dielectric

X. P. Wang, C. Shen, Ming Fu Li, H. Y. Yu, Yiyang Sun, Y. P. Feng, Andy Lim, Hwang Wan Sik, Albert Chin, Y. C. Yeo, Patrick Lo, D. L. Kwong

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

In this work, by using a novel HfLaO high-k (HK) gate dielectric, we show for the first time that with a thermal budget of 1000°C, Fermi-Pinning in die HK-metal gate (MG) stack can be released. The effective metal work function (EWF) can be tuned by a wide range more than the requirement of bulk CMOSFETs, and also fits the future UTB-SOI CMOSFETs when Si body thickness is approaching 3 nm or less. As prototype examples. TaN gate with EWF ~3.9-4 4 eV and TaN/Pt gate with EWF ~5.5 eV are shown. In addition, by replacing HfO₂with HfLaO, high k value and low gate tunneling are maintained, BTI V_thinstability is improved by one order. These new findings arc correlated to the enhanced thermal stability and significantly reduced oxygen vacancy density in HfLaO compared to HfO₂as estimated by the first-principles calculations.

Original language	English
Title of host publication	Selected Semiconductor Research
Publisher	Imperial College Press
Pages	369-370
Number of pages	2
ISBN (Electronic)	9781848164079
ISBN (Print)	9781848164062
DOIs	https://doi.org/10.1142/9781848164079_0006
State	Published - 1 Jan 2011

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@inbook{6261c344790b4aa3bddb71e087e8410a,

title = "Dual metal gates with band-edge work functions on novel HfLaO high-k gate dielectric",

abstract = "In this work, by using a novel HfLaO high-k (HK) gate dielectric, we show for the first time that with a thermal budget of 1000°C, Fermi-Pinning in die HK-metal gate (MG) stack can be released. The effective metal work function (EWF) can be tuned by a wide range more than the requirement of bulk CMOSFETs, and also fits the future UTB-SOI CMOSFETs when Si body thickness is approaching 3 nm or less. As prototype examples. TaN gate with EWF ~3.9-4 4 eV and TaN/Pt gate with EWF ~5.5 eV are shown. In addition, by replacing HfO2with HfLaO, high k value and low gate tunneling are maintained, BTI Vthinstability is improved by one order. These new findings arc correlated to the enhanced thermal stability and significantly reduced oxygen vacancy density in HfLaO compared to HfO2as estimated by the first-principles calculations.",

author = "Wang, {X. P.} and C. Shen and Li, {Ming Fu} and Yu, {H. Y.} and Yiyang Sun and Feng, {Y. P.} and Andy Lim and Sik, {Hwang Wan} and Albert Chin and Yeo, {Y. C.} and Patrick Lo and Kwong, {D. L.}",

year = "2011",

month = jan,

day = "1",

doi = "10.1142/9781848164079_0006",

language = "English",

isbn = "9781848164062",

pages = "369--370",

booktitle = "Selected Semiconductor Research",

publisher = "Imperial College Press",

}

TY - CHAP

T1 - Dual metal gates with band-edge work functions on novel HfLaO high-k gate dielectric

AU - Wang, X. P.

AU - Shen, C.

AU - Li, Ming Fu

AU - Yu, H. Y.

AU - Sun, Yiyang

AU - Feng, Y. P.

AU - Lim, Andy

AU - Sik, Hwang Wan

AU - Chin, Albert

AU - Yeo, Y. C.

AU - Lo, Patrick

AU - Kwong, D. L.

PY - 2011/1/1

Y1 - 2011/1/1

N2 - In this work, by using a novel HfLaO high-k (HK) gate dielectric, we show for the first time that with a thermal budget of 1000°C, Fermi-Pinning in die HK-metal gate (MG) stack can be released. The effective metal work function (EWF) can be tuned by a wide range more than the requirement of bulk CMOSFETs, and also fits the future UTB-SOI CMOSFETs when Si body thickness is approaching 3 nm or less. As prototype examples. TaN gate with EWF ~3.9-4 4 eV and TaN/Pt gate with EWF ~5.5 eV are shown. In addition, by replacing HfO2with HfLaO, high k value and low gate tunneling are maintained, BTI Vthinstability is improved by one order. These new findings arc correlated to the enhanced thermal stability and significantly reduced oxygen vacancy density in HfLaO compared to HfO2as estimated by the first-principles calculations.

AB - In this work, by using a novel HfLaO high-k (HK) gate dielectric, we show for the first time that with a thermal budget of 1000°C, Fermi-Pinning in die HK-metal gate (MG) stack can be released. The effective metal work function (EWF) can be tuned by a wide range more than the requirement of bulk CMOSFETs, and also fits the future UTB-SOI CMOSFETs when Si body thickness is approaching 3 nm or less. As prototype examples. TaN gate with EWF ~3.9-4 4 eV and TaN/Pt gate with EWF ~5.5 eV are shown. In addition, by replacing HfO2with HfLaO, high k value and low gate tunneling are maintained, BTI Vthinstability is improved by one order. These new findings arc correlated to the enhanced thermal stability and significantly reduced oxygen vacancy density in HfLaO compared to HfO2as estimated by the first-principles calculations.

UR - http://www.scopus.com/inward/record.url?scp=84967683877&partnerID=8YFLogxK

U2 - 10.1142/9781848164079_0006

DO - 10.1142/9781848164079_0006

M3 - Chapter

AN - SCOPUS:84967683877

SN - 9781848164062

SP - 369

EP - 370

BT - Selected Semiconductor Research

PB - Imperial College Press

ER -

Dual metal gates with band-edge work functions on novel HfLaO high-k gate dielectric

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