Dual Gate Oxide CMOS Process on 4H-SiC

Bing Yue Tsui; Chia Lung Hung; Te Kai Tsai; Li Jung Lin; Ting Wei Wang; Po Hung Chen

doi:10.1109/VLSI-TSA54299.2022.9771044

Dual Gate Oxide CMOS Process on 4H-SiC

Bing Yue Tsui^*, Chia Lung Hung, Te Kai Tsai, Li Jung Lin, Ting Wei Wang, Po Hung Chen

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

A dual gate oxide 4H-SiC CMOS process is reported for the first time. A 20-nm-thick gate oxide for 10 V operation and 40-nm-thick gate oxide for 20 V operation are realized. The low voltage CMOS can be used for logic circuits and the high voltage CMOS can be used for gate driver and power MOSFETs. Fundamental characteristics of the gate oxides and MOSFETs are presented. CMOS inverter, ring oscillator, level shifter, and gate driver are all demonstrated on a single chip.

Original language	English
Title of host publication	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781665409230
DOIs	https://doi.org/10.1109/VLSI-TSA54299.2022.9771044
State	Published - 2022
Event	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan Duration: 18 Apr 2022 → 21 Apr 2022

Publication series

Name	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Country/Territory	Taiwan
City	Hsinchu
Period	18/04/22 → 21/04/22

Access to Document

10.1109/VLSI-TSA54299.2022.9771044

Cite this

Tsui, B. Y., Hung, C. L., Tsai, T. K., Lin, L. J., Wang, T. W., & Chen, P. H. (2022). Dual Gate Oxide CMOS Process on 4H-SiC. In 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 (pp. 1-2). (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA54299.2022.9771044

@inproceedings{d5b4490e9c7541468d2fa0963de9c448,

title = "Dual Gate Oxide CMOS Process on 4H-SiC",

abstract = "A dual gate oxide 4H-SiC CMOS process is reported for the first time. A 20-nm-thick gate oxide for 10 V operation and 40-nm-thick gate oxide for 20 V operation are realized. The low voltage CMOS can be used for logic circuits and the high voltage CMOS can be used for gate driver and power MOSFETs. Fundamental characteristics of the gate oxides and MOSFETs are presented. CMOS inverter, ring oscillator, level shifter, and gate driver are all demonstrated on a single chip.",

author = "Tsui, {Bing Yue} and Hung, {Chia Lung} and Tsai, {Te Kai} and Lin, {Li Jung} and Wang, {Ting Wei} and Chen, {Po Hung}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 ; Conference date: 18-04-2022 Through 21-04-2022",

year = "2022",

doi = "10.1109/VLSI-TSA54299.2022.9771044",

language = "English",

series = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

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Tsui, BY, Hung, CL, Tsai, TK, Lin, LJ, Wang, TW & Chen, PH 2022, Dual Gate Oxide CMOS Process on 4H-SiC. in 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Hsinchu, Taiwan, 18/04/22. https://doi.org/10.1109/VLSI-TSA54299.2022.9771044

Dual Gate Oxide CMOS Process on 4H-SiC. / Tsui, Bing Yue; Hung, Chia Lung; Tsai, Te Kai et al.
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 1-2 (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Dual Gate Oxide CMOS Process on 4H-SiC

AU - Tsui, Bing Yue

AU - Hung, Chia Lung

AU - Tsai, Te Kai

AU - Lin, Li Jung

AU - Wang, Ting Wei

AU - Chen, Po Hung

PY - 2022

Y1 - 2022

N2 - A dual gate oxide 4H-SiC CMOS process is reported for the first time. A 20-nm-thick gate oxide for 10 V operation and 40-nm-thick gate oxide for 20 V operation are realized. The low voltage CMOS can be used for logic circuits and the high voltage CMOS can be used for gate driver and power MOSFETs. Fundamental characteristics of the gate oxides and MOSFETs are presented. CMOS inverter, ring oscillator, level shifter, and gate driver are all demonstrated on a single chip.

AB - A dual gate oxide 4H-SiC CMOS process is reported for the first time. A 20-nm-thick gate oxide for 10 V operation and 40-nm-thick gate oxide for 20 V operation are realized. The low voltage CMOS can be used for logic circuits and the high voltage CMOS can be used for gate driver and power MOSFETs. Fundamental characteristics of the gate oxides and MOSFETs are presented. CMOS inverter, ring oscillator, level shifter, and gate driver are all demonstrated on a single chip.

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U2 - 10.1109/VLSI-TSA54299.2022.9771044

DO - 10.1109/VLSI-TSA54299.2022.9771044

M3 - Conference contribution

AN - SCOPUS:85130428750

T3 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

SP - 1

EP - 2

BT - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Y2 - 18 April 2022 through 21 April 2022

ER -

Tsui BY, Hung CL, Tsai TK, Lin LJ, Wang TW, Chen PH. Dual Gate Oxide CMOS Process on 4H-SiC. In 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 1-2. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). doi: 10.1109/VLSI-TSA54299.2022.9771044

Dual Gate Oxide CMOS Process on 4H-SiC

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