Dual Gate Oxide CMOS Process on 4H-SiC

Bing Yue Tsui*, Chia Lung Hung, Te Kai Tsai, Li Jung Lin, Ting Wei Wang, Po-Hung Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A dual gate oxide 4H-SiC CMOS process is reported for the first time. A 20-nm-thick gate oxide for 10 V operation and 40-nm-thick gate oxide for 20 V operation are realized. The low voltage CMOS can be used for logic circuits and the high voltage CMOS can be used for gate driver and power MOSFETs. Fundamental characteristics of the gate oxides and MOSFETs are presented. CMOS inverter, ring oscillator, level shifter, and gate driver are all demonstrated on a single chip.

Original languageEnglish
Title of host publication2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781665409230
DOIs
StatePublished - 2022
Event2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan
Duration: 18 Apr 202221 Apr 2022

Publication series

Name2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Country/TerritoryTaiwan
CityHsinchu
Period18/04/2221/04/22

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