Dual-gate igzo tft for threshold-voltage compensation in amoled pixel circuit

Lu Sheng Chou; Hao Lin Chiu; Bo Cheng Chen; Ya Hsiang Tai

doi:10.1002/j.2168-0159.2012.tb05897.x

Dual-gate igzo tft for threshold-voltage compensation in amoled pixel circuit

Lu Sheng Chou, Hao Lin Chiu, Bo Cheng Chen, Ya Hsiang Tai

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

19 Scopus citations

Abstract

In addition to the gate electrode at the bottom, a dual-gate InGaZnO₄ (a-IGZO) thin film transistor (TFT) has a secondary gate electrode on the top. The threshold voltage of the TFT using the bottom-gate in its normal operation can be controlled by the top-gate. Based on this phenomenon, a new concept of using the top-gate to compensate threshold voltage variation is proposed. This new technique is demonstrated in two pixel circuits of active-matrix organic light-emitting diode and verified by the measurement results.

Original language	English
Pages (from-to)	768-771
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	43
Issue number	1
DOIs	https://doi.org/10.1002/j.2168-0159.2012.tb05897.x
State	Published - 2012
Event	49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States Duration: 3 Jun 2012 → 8 Jun 2012

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10.1002/j.2168-0159.2012.tb05897.x

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title = "Dual-gate igzo tft for threshold-voltage compensation in amoled pixel circuit",

abstract = "In addition to the gate electrode at the bottom, a dual-gate InGaZnO4 (a-IGZO) thin film transistor (TFT) has a secondary gate electrode on the top. The threshold voltage of the TFT using the bottom-gate in its normal operation can be controlled by the top-gate. Based on this phenomenon, a new concept of using the top-gate to compensate threshold voltage variation is proposed. This new technique is demonstrated in two pixel circuits of active-matrix organic light-emitting diode and verified by the measurement results.",

author = "Chou, {Lu Sheng} and Chiu, {Hao Lin} and Chen, {Bo Cheng} and Tai, {Ya Hsiang}",

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AU - Chou, Lu Sheng

AU - Chiu, Hao Lin

AU - Chen, Bo Cheng

AU - Tai, Ya Hsiang

PY - 2012

Y1 - 2012

N2 - In addition to the gate electrode at the bottom, a dual-gate InGaZnO4 (a-IGZO) thin film transistor (TFT) has a secondary gate electrode on the top. The threshold voltage of the TFT using the bottom-gate in its normal operation can be controlled by the top-gate. Based on this phenomenon, a new concept of using the top-gate to compensate threshold voltage variation is proposed. This new technique is demonstrated in two pixel circuits of active-matrix organic light-emitting diode and verified by the measurement results.

AB - In addition to the gate electrode at the bottom, a dual-gate InGaZnO4 (a-IGZO) thin film transistor (TFT) has a secondary gate electrode on the top. The threshold voltage of the TFT using the bottom-gate in its normal operation can be controlled by the top-gate. Based on this phenomenon, a new concept of using the top-gate to compensate threshold voltage variation is proposed. This new technique is demonstrated in two pixel circuits of active-matrix organic light-emitting diode and verified by the measurement results.

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JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

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T2 - 49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012

Y2 - 3 June 2012 through 8 June 2012

ER -

Dual-gate igzo tft for threshold-voltage compensation in amoled pixel circuit

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