Drift-diffusion modeling for impurity photovoltaic devices

Albert Lin*, Jamie D. Phillips

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    36 Scopus citations

    Abstract

    A 1-D drift-diffusion modeling for impurity photovoltaics is presented. The model is based on the self-consistent solution of Poisson's equation and carrier continuity equations incorporating generation and recombination mechanisms including the intermediate states. The model is applied to a prototypical solar cell device, where strong space charge effects and reduced conversion efficiency are identified for the case of lightly doped absorption regions. A doping compensation scheme is proposed to mitigate the space charge effects, with optimal doping corresponding to one-half the concentration of the intermediate states. The compensated doping device design provides calculated conversion efficiencies of approximately 40%, which is similar to the maximum expected values from prior 0-D models. The carrier transport between intermediate levels is shown to be noncritical for achieving the efficiency limit predicted by 0-D models. The qualitative behavior of the model is compared to existing experimental data on quantum dot solar cells.

    Original languageEnglish
    Article number5306157
    Pages (from-to)3168-3174
    Number of pages7
    JournalIEEE Transactions on Electron Devices
    Volume56
    Issue number12
    DOIs
    StatePublished - 1 Dec 2009

    Keywords

    • Drift-diffusion model
    • Intermediate levels (ILs)
    • Semiconductor
    • Solar cell

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