Doping and electrical properties of amorphous silicon carbon nitride films

Y. C. Chou; S. Chattopadhyay; L. C. Chen; Y. F. Chen; K. H. Chen

doi:10.1016/S0925-9635(02)00393-X

Doping and electrical properties of amorphous silicon carbon nitride films

Y. C. Chou, S. Chattopadhyay, L. C. Chen^*, Y. F. Chen, K. H. Chen

^*Corresponding author for this work

Institute of Biophotonics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Electrical properties and annealing behaviour of undoped and doped amorphous silicon carbon nitride (a-SiC_xN_y) thin films, deposited by ion beam sputtering techniques, have been studied. Doping of the a-SiC_xN_y thin films with magnesium (Mg), and phosphorous (P) was carried out by ion implantation techniques, and subsequent annealing effect on the electrical conductivity (σ) and activation energies for electrical conduction have been reported. It was found that the undoped films were insulating with electrical conductivities in the range of 10^-6-10^-8 S/cm. Annealing of these films at high temperatures aided in some structural relaxation and hence an increase in σ by several orders of magnitude without showing any indications for crystallization. Suitable doping (Mg) of the films resulted in increased σ, and in some cases of low phosphorous doping a decrease in σ was also found which indicated that the films may be intrinsically p-type.

Original language	English
Pages (from-to)	1213-1219
Number of pages	7
Journal	Diamond and Related Materials
Volume	12
Issue number	3-7
DOIs	https://doi.org/10.1016/S0925-9635(02)00393-X
State	Published - Mar 2003

Keywords

Electrical conductivity
Ion implantation
Photoelectron spectroscopy
Physical vapour deposition

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@article{ec1d02f8ec224437a3177c7fff9fbf98,

title = "Doping and electrical properties of amorphous silicon carbon nitride films",

abstract = "Electrical properties and annealing behaviour of undoped and doped amorphous silicon carbon nitride (a-SiCxNy) thin films, deposited by ion beam sputtering techniques, have been studied. Doping of the a-SiCxNy thin films with magnesium (Mg), and phosphorous (P) was carried out by ion implantation techniques, and subsequent annealing effect on the electrical conductivity (σ) and activation energies for electrical conduction have been reported. It was found that the undoped films were insulating with electrical conductivities in the range of 10-6-10-8 S/cm. Annealing of these films at high temperatures aided in some structural relaxation and hence an increase in σ by several orders of magnitude without showing any indications for crystallization. Suitable doping (Mg) of the films resulted in increased σ, and in some cases of low phosphorous doping a decrease in σ was also found which indicated that the films may be intrinsically p-type.",

keywords = "Electrical conductivity, Ion implantation, Photoelectron spectroscopy, Physical vapour deposition",

author = "Chou, {Y. C.} and S. Chattopadhyay and Chen, {L. C.} and Chen, {Y. F.} and Chen, {K. H.}",

note = "Funding Information: The work was carried out under a project funded by the National Science Council, Taiwan, under Contract Nos. NSC90-2112-M002-048, and Ministry of Education under Contract Nos. 90-W-FA01-2-4-5. One of the authors (S.C) acknowledges the award of a post-doctoral fellowship by the National Science Council, Taiwan.",

year = "2003",

month = mar,

doi = "10.1016/S0925-9635(02)00393-X",

language = "English",

volume = "12",

pages = "1213--1219",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier B.V.",

number = "3-7",

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TY - JOUR

T1 - Doping and electrical properties of amorphous silicon carbon nitride films

AU - Chou, Y. C.

AU - Chattopadhyay, S.

AU - Chen, L. C.

AU - Chen, Y. F.

AU - Chen, K. H.

N1 - Funding Information: The work was carried out under a project funded by the National Science Council, Taiwan, under Contract Nos. NSC90-2112-M002-048, and Ministry of Education under Contract Nos. 90-W-FA01-2-4-5. One of the authors (S.C) acknowledges the award of a post-doctoral fellowship by the National Science Council, Taiwan.

PY - 2003/3

Y1 - 2003/3

N2 - Electrical properties and annealing behaviour of undoped and doped amorphous silicon carbon nitride (a-SiCxNy) thin films, deposited by ion beam sputtering techniques, have been studied. Doping of the a-SiCxNy thin films with magnesium (Mg), and phosphorous (P) was carried out by ion implantation techniques, and subsequent annealing effect on the electrical conductivity (σ) and activation energies for electrical conduction have been reported. It was found that the undoped films were insulating with electrical conductivities in the range of 10-6-10-8 S/cm. Annealing of these films at high temperatures aided in some structural relaxation and hence an increase in σ by several orders of magnitude without showing any indications for crystallization. Suitable doping (Mg) of the films resulted in increased σ, and in some cases of low phosphorous doping a decrease in σ was also found which indicated that the films may be intrinsically p-type.

AB - Electrical properties and annealing behaviour of undoped and doped amorphous silicon carbon nitride (a-SiCxNy) thin films, deposited by ion beam sputtering techniques, have been studied. Doping of the a-SiCxNy thin films with magnesium (Mg), and phosphorous (P) was carried out by ion implantation techniques, and subsequent annealing effect on the electrical conductivity (σ) and activation energies for electrical conduction have been reported. It was found that the undoped films were insulating with electrical conductivities in the range of 10-6-10-8 S/cm. Annealing of these films at high temperatures aided in some structural relaxation and hence an increase in σ by several orders of magnitude without showing any indications for crystallization. Suitable doping (Mg) of the films resulted in increased σ, and in some cases of low phosphorous doping a decrease in σ was also found which indicated that the films may be intrinsically p-type.

KW - Electrical conductivity

KW - Ion implantation

KW - Photoelectron spectroscopy

KW - Physical vapour deposition

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U2 - 10.1016/S0925-9635(02)00393-X

DO - 10.1016/S0925-9635(02)00393-X

M3 - Article

AN - SCOPUS:0038522568

SN - 0925-9635

VL - 12

SP - 1213

EP - 1219

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 3-7

ER -

Doping and electrical properties of amorphous silicon carbon nitride films

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Keywords

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